In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 5, 2012, Pages

  Hudait, Mantu K ^a   Zhu, Yan ^a   Jain, Nikhil ^a   Vijayaraghavan, Siddharth ^a   Saha, Avijit ^a   Merritt, Travis ^b   Khodaparast, Giti A ^b  

^a Virginia Polytechnic Institute and State University   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; EPILAYERS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS;

BAND OFFSETS; BAND-GAP EMISSION; CARRIER CONFINEMENTS; DEPTH PROFILE; DOUBLE HETEROSTRUCTURES; DYNAMIC SECONDARY ION MASS SPECTROMETRY; GAAS; GAAS SUBSTRATES; GE EPILAYER; HETERO INTERFACES; HIGH QUALITY; HIGH RESOLUTION; IN-SITU; QUANTUM WELL FIELD-EFFECT TRANSISTORS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SMOOTH SURFACE; VACUUM TRANSFER; VALENCE BAND OFFSETS; X RAY ROCKING CURVE;

GERMANIUM;

EID: 84866522559     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4742904     Document Type: Article

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