C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al 2O 3 dielectric

Microelectronic Engineering

Volumn 97, Issue , 2012, Pages 16-19

  Tang, Shih Hsuan ^a   Kuo, Chien I ^a   Trinh, Hai Dang ^a   Hudait, Mantu ^b   Chang, Edward Yi ^a   Hsu, Ching Yi ^a   Su, Yung Hsuan ^a   Luo, Guang Li ^c   Nguyen, Hong Quan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Virginia Polytechnic Institute and State University   (United States)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

ALD Al2O3; CMOS integration; Ge epitaxial film; Ge MOSCAP; RTO

Indexed keywords

ALD AL2O3; ATOMIC LAYER DEPOSITED; C-V CHARACTERISTIC; CMOS INTEGRATION; CONDUCTANCE METHOD; ELECTRICAL CHARACTERISTIC; GAAS SUBSTRATES; HF TREATMENT; INTERFACE QUALITY; INTERFACE STATE DENSITY; LOW-LEAKAGE CURRENT; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; P-TYPE BEHAVIORS; RAPID THERMAL OXIDATION; RTO;

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITORS; DIELECTRIC DEVICES; EPITAXIAL FILMS; GALLIUM ARSENIDE; GATE DIELECTRICS; REGENERATORS;

GERMANIUM;

EID: 84860223671     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.03.014     Document Type: Article

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