Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Kim, Jiseok ^a   Fischetti, Massimo V ^a  

^a University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP BOWING PARAMETER; BAND GAPS; BIAXIAL STRAINS; CUBIC-SPLINE INTERPOLATION; DEFORMATION POTENTIAL; EFFECTIVE MASS; ELECTRONIC BAND STRUCTURE; ELECTRONIC BAND STRUCTURE CALCULATION; EMPIRICAL PSEUDO-POTENTIAL; EXPERIMENTAL DATA; FORM FACTORS; GAAS; HOLE EFFECTIVE MASS; II-IV SEMICONDUCTORS; III-V COMPOUND SEMICONDUCTOR; INAS; INP; INTERFACE ORIENTATION; LEAST-SQUARE FITTING; NONLOCAL; NONLOCAL PSEUDOPOTENTIALS; POTENTIAL THEORY; SPIN ORBIT INTERACTIONS; SPIN ORBITS; STRAINED-SI; SUDDEN CHANGE; VIRTUAL CRYSTAL APPROXIMATION;

APPROXIMATION THEORY; DEFORMATION; ENERGY GAP; GERMANIUM; INDIUM ANTIMONIDES; INTERPOLATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SPIN DYNAMICS;

GALLIUM ALLOYS;

EID: 77955225298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3437655     Document Type: Article

References (61)

1. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 153 (2005). 10.1109/TNANO.2004.842073 (Pubitemid 40421651)
2. J. Welser, J. Hoyt, and J. Gibbons, IEEE Electron Device Lett. EDLEDZ 0741-3106 15, 100 (1994). 10.1109/55.285389
3. K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong, and H. -S. P. Wong, Solid-State Electron. SSELA5 0038-1101 47, 1133 (2003). 10.1016/S0038-1101(03)00041-8
4. M. Lee, C. Leitz, Z. Cheng, A. Pitera, T. Langdo, M. Currie, G. Taraschi, E. Fitzgerald, and D. Antoniadis, Appl. Phys. Lett. APPLAB 0003-6951 79, 3344 (2001). 10.1063/1.1417515
5. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices IETDAI 0018-9383 41, 2357 (1994). 10.1109/16.337449
6. M. Fischetti and S. Laux, J. Appl. Phys. JAPIAU 0021-8979 80, 2234 (1996). 10.1063/1.363052
7. Y. Sun, S. Thompson, and T. Nishida, J. Appl. Phys. JAPIAU 0021-8979 101, 104503 (2007). 10.1063/1.2730561 (Pubitemid 46876582)
8. M. Fischetti, F. Gámiz, and W. Hänsch, J. Appl. Phys. JAPIAU 0021-8979 92, 7320 (2002). 10.1063/1.1521796
9. S. Takagi, J. Hoyt, J. Welser, and J. Gibbons, J. Appl. Phys. JAPIAU 0021-8979 80, 1567 (1996). 10.1063/1.362953
10. J. Chelikowsky and M. Cohen, Phys. Rev. B PRBMDO 0163-1829 14, 556 (1976). 10.1103/PhysRevB.14.556
11. P. Friedel, M. Hybertsen, and M. Schlüter, Phys. Rev. B PRBMDO 0163-1829 39, 7974 (1989). 10.1103/PhysRevB.39.7974
12. S. Lee, T. Kwon, K. Nahm, and C. Kim, J. Phys.: Condens. Matter JCOMEL 0953-8984 2, 3253 (1990). 10.1088/0953-8984/2/14/010
13. K. Kassali and N. Bouarissa, Solid-State Electron. SSELA5 0038-1101 44, 501 (2000). 10.1016/S0038-1101(99)00265-8 (Pubitemid 30564799)
14. N. Bouarissa, Phys. Lett. A PYLAAG 0375-9601 245, 285 (1998). 10.1016/S0375-9601(98)00403-4
15. M. Goano, E. Bellotti, E. Ghillino, C. Garetto, G. Ghione, and K. Brennan, J. Appl. Phys. JAPIAU 0021-8979 88, 6476 (2000). 10.1063/1.1309047
16. F. Long, P. Harrison, and W. Hagston, J. Appl. Phys. JAPIAU 0021-8979 79, 6939 (1996). 10.1063/1.361519
17. M. Rieger and P. Vogl, Phys. Rev. B PRBMDO 0163-1829 48, 14276 (1993). 10.1103/PhysRevB.48.14276
18. Y. Zhang, J. Kim, and M. Fischetti, J. Comput. Electron. JCEOA7 1569-8025 7, 176 (2008). 10.1007/s10825-007-0159-1
19. K. Mäder and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 50, 17393 (1994). 10.1103/PhysRevB.50.17393
20. O. Nielsen and R. Martin, Phys. Rev. B PRBMDO 0163-1829 32, 3792 (1985). 10.1103/PhysRevB.32.3792
21. C. Van de Walle and R. Martin, Phys. Rev. B PRBMDO 0163-1829 34, 5621 (1986). 10.1103/PhysRevB.34.5621
22. M. Krijn, Semicond. Sci. Technol. SSTEET 0268-1242 6, 27 (1991). 10.1088/0268-1242/6/1/005
23. Q. Ma, K. Wang, and J. Schulman, Phys. Rev. B PRBMDO 0163-1829 47, 1936 (1993). 10.1103/PhysRevB.47.1936
24. Data in Science and Technology: Semiconductors Group IV Elements and III-V Compounds, edited by, O. Madelung, (Springer-Verlag, Berlin, 1991).
25. L. Brey, N. Christensen, and M. Cardona, Phys. Rev. B PRBMDO 0163-1829 36, 2638 (1987). 10.1103/PhysRevB.36.2638
26. J. C. Phillips and K. C. Pandey, Phys. Rev. Lett. PRLTAO 0031-9007 30, 787 (1973). 10.1103/PhysRevLett.30.787
27. M. Fischetti and J. Higman, in Monte Carlo Device Simulation: Full Band and Beyond, edited by, K. Hess, (Kluwer Academic, Norwell, 1991), Chap., pp. 123-160.
28. A. Williamson and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 59, 15819 (1999). 10.1103/PhysRevB.59.15819
29. O. Glembocki and F. Pollak, Phys. Rev. B PRBMDO 0163-1829 25, 7863 (1982). 10.1103/PhysRevB.25.7863
30. P. Allen and M. Cardona, Phys. Rev. B PRBMDO 0163-1829 27, 4760 (1983). 10.1103/PhysRevB.27.4760
31. S. Bednarek and U. Rössler, Phys. Rev. Lett. PRLTAO 0031-9007 48, 1296 (1982). 10.1103/PhysRevLett.48.1296
32. P. Allen and M. Cardona, Phys. Rev. B PRBMDO 0163-1829 23, 1495 (1981). 10.1103/PhysRevB.23.1495
33. W. Harrison, 1966, 336 P. W. A. Benjamin, Inc., New York (1966).
34. C. Yeh, S. Zhang, and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 50, 14405 (1994). 10.1103/PhysRevB.50.14405
35. L. Wang and A. Zunger, J. Phys. Chem. JPCHAX 0022-3654 98, 2158 (1994). 10.1021/j100059a032
36. S. Zhang, C. Yeh, and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 48, 11204 (1993). 10.1103/PhysRevB.48.11204
37. L. Bellaiche, S. Wei, and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 54, 17568 (1996). 10.1103/PhysRevB.54.17568
38. I. Vurgaftman, J. Meyer, and L. Ram-Mohan, J. Appl. Phys. JAPIAU 0021-8979 89, 5815 (2001). 10.1063/1.1368156
39. S. Tiwari and D. J. Frank, Appl. Phys. Lett. APPLAB 0003-6951 60, 630 (1992). 10.1063/1.106575
40. C. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 39, 1871 (1989). 10.1103/PhysRevB.39.1871
41. S. Adachi, J. Appl. Phys. JAPIAU 0021-8979 61, 4869 (1987). 10.1063/1.338352
42. A. Bechiri, F. Benmakhlouf, and N. Bouarissa, Mater. Chem. Phys. MCHPDR 0254-0584 77, 507 (2003). 10.1016/S0254-0584(02)00124-4 (Pubitemid 34814144)
43. O. Berolo, J. Woolley, and J. Van Vechten, Phys. Rev. B PRBMDO 0163-1829 8, 3794 (1973). 10.1103/PhysRevB.8.3794
44. D. Gershoni, H. Temkin, J. Vandenberg, S. Chu, R. Hamm, and M. Panish, Phys. Rev. Lett. PRLTAO 0031-9007 60, 448 (1988). 10.1103/PhysRevLett.60.448
45. E. Kuphal, A. Pöcker, and A. Eisenbach, J. Appl. Phys. JAPIAU 0021-8979 73, 4599 (1993). 10.1063/1.352751
46. R. Driad, Z. Lu, S. Charbonneau, W. McKinnon, S. Laframboise, P. Poole, and S. McAlister, Appl. Phys. Lett. APPLAB 0003-6951 73, 665 (1998). 10.1063/1.121941 (Pubitemid 128673877)
47. S. Chu, A. Macrander, K. Strege, and W. Johnston, Jr., J. Appl. Phys. JAPIAU 0021-8979 57, 249 (1985). 10.1063/1.334797
48. T. Wang and G. Stringfellow, J. Appl. Phys. JAPIAU 0021-8979 67, 344 (1990). 10.1063/1.345260
49. K. Kim, G. Hart, and A. Zunger, Appl. Phys. Lett. APPLAB 0003-6951 80, 3105 (2002). 10.1063/1.1470693 (Pubitemid 34562572)
50. D. Gershoni, J. Vandenberg, R. Hamm, H. Temkin, and M. Panish, Phys. Rev. B PRBMDO 0163-1829 36, 1320 (1987). 10.1103/PhysRevB.36.1320
51. P. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, 3rd ed. (Springer, Berlin, 2001).
52. F. Pollak and M. Cardona, Phys. Rev. PRVAAH 0096-8250 172, 816 (1968). 10.1103/PhysRev.172.816
53. M. Chandrasekhar and F. Pollak, Phys. Rev. B PRBMDO 0163-1829 15, 2127 (1977). 10.1103/PhysRevB.15.2127
54. C. Herring and E. Vogt, Phys. Rev. PRVAAH 0096-8250 101, 944 (1956). 10.1103/PhysRev.101.944
55. I. Balslev, Phys. Rev. PRVAAH 0096-8250 143, 636 (1966). 10.1103/PhysRev.143.636
56. Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, edited by, O. Madelung, New Series Group III Vol. 17C (Springer, Berlin, 1982).
57. C. Priester, G. Allan, and M. Lannoo, Phys. Rev. B PRBMDO 0163-1829 37, 8519 (1988). 10.1103/PhysRevB.37.8519
58. M. Silver, W. Batty, A. Ghiti, and E. O'Reilly, Phys. Rev. B PRBMDO 0163-1829 46, 6781 (1992). 10.1103/PhysRevB.46.6781
59. R. Noack, W. Rühle, and T. Morgan, Phys. Rev. B PRBMDO 0163-1829 18, 6944 (1978). 10.1103/PhysRevB.18.6944
60. S. Adachi, Properties of Semiconductor Alloys:Group-IV, III-V and II-VI Semiconductors (Wiley, New York, 2009).
61. C. Geller, W. Wolf, S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, A. Freeman, and E. Wimmer, Appl. Phys. Lett. APPLAB 0003-6951 79, 368 (2001). 10.1063/1.1383282 (Pubitemid 32683693)