Physical origin of drive current enhancement in ultrathin Ge-on-insulator n-channel metal-oxide-semiconductor field-effect transistors under full ballistic transport

Japanese Journal of Applied Physics

Volumn 50, Issue 1, 2011, Pages

  Takagi, Shinichi ^a   Takenaka, Mitsuru ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; CURRENT DRIVES; DENSITY-OF-STATES; DRIVE CURRENT ENHANCEMENT; DRIVE CURRENTS; EFFECTIVE MASS; ELECTRON OCCUPANCY; GATE OXIDE THICKNESS; GATE VOLTAGES; GE ON INSULATORS; GE SURFACES; GERMANIUM-ON-INSULATOR; INJECTION VELOCITY; LAYER CAPACITANCE; LAYER THICKNESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; NMOSFETS; PHYSICAL THICKNESS; SIZE EFFECTS; SUB-BANDS; SURFACE ORIENTATION; TRADE-OFF RELATIONSHIP; ULTRA-THIN;

BALLISTICS; DIELECTRIC DEVICES; GERMANIUM; ION BEAMS; MOS DEVICES; MOSFET DEVICES; TRANSPORT PROPERTIES; ULTRATHIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 79951507725     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.010110     Document Type: Article

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