Low-temperature growth of In x Ga 1-x N films by radio-frequency magnetron sputtering

Applied Surface Science

Volumn 265, Issue , 2013, Pages 399-404

  Wang, J ^a   Shi, X J ^a   Zhu, J ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Grazing incidence X ray diffraction (GIXRD); Oxygen contamination; Secondary ion mass spectrometry (SIMS); X ray photoelectron spectroscopy (XPS)

Indexed keywords

BINARY ALLOYS; GALLIUM COMPOUNDS; IMPURITIES; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; OXIDE FILMS; PHOTOELECTRONS; PHOTONS; RADIO WAVES; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR ALLOYS; SUBSTRATES; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

DISTRIBUTION PROFILES; GRAZING-INCIDENCE X-RAY DIFFRACTION; INTERFERENCE FRINGE PATTERN; LOW TEMPERATURE GROWTH; OPTICAL TRANSMITTANCE SPECTRUM; OXYGEN CONTAMINATION; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY MAGNETRON SPUTTERING;

GALLIUM ALLOYS;

EID: 84871935966     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.10.202     Document Type: Article

References (45)

1. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi Unusual properties of the fundamental band gap of InN Applied Physics Letters 80 2002 3967 3969
2. V.Y. Davydov, A.A. Klochikhin, V.V. Emtsev, D.A. Kurdyukov, S.V. Ivanov, V.A. Vekshin, F. Bechstedt, J. Furthmuller, J. Aderhold, J. Graul, A.V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E.E. Haller Band gap of hexagonal InN and InGaN alloys Physical Status Solidi B 234 2002 787 796
3. x N alloys: full-solar-spectrum photovoltaic material system Journal of Applied Physics 94 2003 6477 6482
4. 1-x N tandem PV structures Solar Energy Materials and Solar Cells 87 2005 595 603
5. 1-x N alloys by metalorganic chemical vapor deposition for solar cell applications Journal of Photonics for Energy 2 2012 028501
6. S.M. Bedair, F.G. McIntosh, J.C. Roberts, E.L. Piner, K.S. Boutros, and N.A. El-Masry Growth and characterization of In-based nitride compounds Journal of Crystal Growth 178 1997 32 44
7. W.V. der Stricht, I. Moerman, P. Demeester, J.A. Crawley, and E.J. Thrush Study of GaN and InGaN films grown by metalorganic chemical vapour deposition Journal of Crystal Growth 170 1997 344 348
8. R. Nowak, T. Soga, and M. Umeno Surface deformation of the InGaN thin films deposited on a sapphire substrate Thin Solid Films 295 1997 193 198
9. H.K. Cho, and G.M. Yang Generation of misfit dislocations in high indium content InGaN layer grown on GaN Journal of Crystal Growth 243 2002 124 128
10. S.R. Jian, T.H. Fang, and D.S. Chuu Nanomechanical characterizations of InGaN thin films Applied Surface Science 252 2006 3033 3042
11. 1-x N (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition Applied Physics Letters 93 2008 182107
12. 1-x N Journal of Crystal Growth 170 1997 306 311
13. A. Cremades, and J. Piqueras Study of carrier recombination at structure defects in InGaN films Materials Science and Engineering B 91 92 2002 341 344
14. Y. Kangawa, K. Kakimoto, T. Ito, and A. Koukitu Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE Journal of Crystal Growth 311 2009 463 465
15. V.P. Chaly, B.A. Borisov, D.M. Demidov, D.M. Krasovitsky, Yu.V. Pogorelsky, A.P. Shkurko, I.A. Sokolov, and S.Yu. Karpov Indium droplet formation during molecular beam epitaxy of InGaN Journal of Crystal Growth 206 1999 147 149
16. 1-x N alloys growth by molecular beam epitaxy Journal of Applied Physics 85 1999 883 886
17. 1-x N Physica B 376 377 2006 468 472
18. H. Komaki, R. Katayama, K. Onabe, M. Ozeki, and T. Ikari Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE Journal of Crystal Growth 305 2007 12 18
19. H. Shinoda, and N. Mutsukura Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy Thin Solid Films 516 2008 2837 2842
20. 1-x N films deposited by reactive RF-sputtering Journal of Non-Crystalline Solids 2012 10.1016/j.jnoncrysol.2012. 01.023
21. A.G. Bhuiyan, A. Hashimoto, and A. Yamamoto Indium nitride (InN): a review on growth, characterization, and properties Journal of Applied Physics 94 2003 2779 2808
22. 1-x N films prepared by MOVPE Japanese Journal of Applied Physics 28 1989 L1334 L1336
23. K. Poochinda, T.C. Chen, T.G. Stoebe, and N.L. Ricker Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD Journal of Crystal Growth 272 2004 460 465
24. Y. Sato, A. Kurosaki, and S. Sato Low-temperature growth of GaN and InxGa1-xN films on glass substrates Journal of Crystal Growth 189-190 1998 42 46
25. 1-x N films grown by modified activated reactive evaporation Applied Surface Science 258 2011 1744 1749
26. M.F. Wu, S.Q. Zhou, A. Vantomme, Y. Huang, H. Wang, and H. Yang High-precision determination of lattice constants and structural characterization of InN thin films Journal of Vacuum Science and Technology A 24 2006 275 279
27. M. Krawczyk, W. Lisowski, J.W. Sobczak, A. Kosiński, A. Jablonski, C. Skierbiszewski, M. Siekacz, and S. Wia̧zkowaka Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy Journal of Alloys and Compounds 509 2011 9565 9571
28. D.T. Clark, T. Fok, G.G. Roberts, and R.W. Sykes An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (1 0 0) surface of n-type InP epitaxial layers for Langmuir film deposition Thin Solid Films 70 1980 261 283
29. H. Iwakuro, C. Tatsuyama, and S. Ichimura XPS and AES studies on the oxidation of layered semiconductor GaSe Japanese Journal of Applied Physics 21 1982 94 99
30. 2 adsorption on Al(1 0 0) Surface Science 208 1989 L91 L97
31. A. Dixit, C. Sudakar, R. Naik, G. Lawes, J.S. Thakur, E.F. McCullen, G.W. Auner, and V.M. Naik Phase separation and optical properties in oxygen-rich InN films Applied Physics Letters 93 2008 142103
32. 2 photoelectrodes Journal of Applied Physics 57 1985 4761 4771
33. M. Faur, M. Faur, D.T. Jayne, M. Goradia, and C. Goradia XPS investigation of anodic oxides grown on p-type InP Surface and Interface Analysis 15 1990 641 650
34. Q.X. Guo, M. Nishio, H. Ogawa, A. Wakahara, and A. Yoshida Electronic structure of indium nitride studied by photoelectron spectroscopy Physical Review B 58 1998 15304 15306
35. C.C. Surdu-Bob, S.O. Saied, and J.L. Sullivan An X-ray photoelectron spectroscopy study of the oxides of GaAs Applied Surface Science 183 2001 126 136
36. R. Carin, J.P. Deville, and J. Werckmann An XPS study of GaN thin films on GaAs Surface and Interface Analysis 16 1990 65 69
37. W. Priyantha, G. Radhakrishnan, R. Droopad, and M. Passlack In-situ X.P.S and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy Journal of Crystal Growth 323 2011 103 106
38. J.F. Moulder, W.F. Stickle, P.E. Sobol, and K.D. Bomben Handbook of X-Ray Photoelectron Spectroscopy 1995 Perkin-Elmer Corporation Physical Electronics Division Eden Prairie, MA, USA
39. 3 adsorption on clean amorphous silicon and on crystalline silicon surfaces and nitrogen bonding in hydrogenated amorphous silicon nitride films: A comparative X-ray photoelectron spectroscopy study Thin Solid Films 149 1987 385 392
40. K.S.A. Butcher, A.J. Fernandes, P.P.-T. Chen, M. Wintrebert-Fouquet, H. Timmers, S.K. Shrestha, H. Hirshy, R.M. Perks, and B.F. Usher The nature of nitrogen related point defects in common forms of InN Journal of Applied Physics 101 2007 123702
41. K.L. Westra, R.P.W. Lawson, and M.J. Brett The effect of oxygen contamination on the properties of reactively sputtered indium nitride films Journal of Vacuum Science and Technology A 6 1988 1730 1732
42. T. Çolakoǧlu, M. Parlak, and S. Özder Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique Journal of Non-Crystalline Solids 354 2008 3630 3636
43. 2 thin films Applied Surface Science 258 2012 8527 8532
44. x N alloys Applied Physics Letters 80 2002 4741 4743
45. D.V.P. McLaughlin, and J.M. Pearce Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cells Materials Science and Engineering B 177 2012 239 244