Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 460-465

  Poochinda, Kunakorn ^a   Chen, Tai Chang ^a   Stoebe, Thomas G ^a   Ricker, N Lawrence ^a  

^a University of Washington   (United States)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARACTERIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYER ANNEALING; INTERATOMIC SPACING; SEMICONDUCTING III-V MATERIALS; TRIMETHYLINDIUM (TMIN);

GALLIUM NITRIDE;

EID: 9944233433     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.099     Document Type: Conference Paper

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