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Volumn 323, Issue 1, 2011, Pages 103-106
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In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy
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Author keywords
Dielectric materials; Gallium oxides; Interfaces; Molecular beam epitaxy; X ray photoelectron spectroscopy
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Indexed keywords
CONTROLLED DEPOSITION;
ENHANCEMENT MODES;
GAAS;
GAAS SURFACES;
GALLIUM OXIDES;
GROWTH PROCESS;
IN-SITU;
INTERFACE STATE DENSITY;
INTERFACES;
LOW LEVEL;
MULTI-CHAMBER;
OXIDE LAYER;
PHOTOEMISSION TECHNIQUES;
SUBSTRATE TEMPERATURE;
XPS;
DIELECTRIC MATERIALS;
DIMERS;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
GALLIUM ARSENIDE;
GATE DIELECTRICS;
GATES (TRANSISTOR);
GROWTH (MATERIALS);
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOSFET DEVICES;
PHOTOELECTRICITY;
PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTING GALLIUM;
X RAY PHOTOELECTRON SPECTROSCOPY;
GALLIUM ALLOYS;
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EID: 79958008716
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.122 Document Type: Article |
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Times cited : (42)
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References (27)
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