Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy

Journal of Alloys and Compounds

Volumn 509, Issue 40, 2011, Pages 9565-9571

  Krawczyk, Mirosław ^a   Lisowski, Wojciech ^a   Sobczak, Janusz W ^a   Kosiński, Andrzej ^a   Jablonski, Aleksander ^a   Skierbiszewski, Czesław ^b   Siekacz, Marcin ^b   Wia̧zkowska, Sylwia ^b  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Composition fluctuations; Crystal growth; Inorganic materials; Nitride materials; Photoelectron spectroscopies; X ray diffraction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; GALLIUM ALLOYS; GOLD; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; X RAY DIFFRACTION;

COMPOSITION FLUCTUATIONS; DEPTH-PROFILE ANALYSIS; ELASTIC PEAK ELECTRON SPECTROSCOPY; ELECTRON INELASTIC MEAN FREE PATHS; INORGANIC MATERIALS; NITRIDE MATERIALS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; ROOT MEAN SQUARE DEVIATIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80052336822     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.07.052     Document Type: Article

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