Low-temperature growth of GaN and InxGa1 - xN films on glass substrates

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 42-46

  Sato, Yuichi ^a   Kurosaki, Atsushi ^a   Sato, Susumu ^a  

^a AKITA UNIVERSITY   (Japan)

Author keywords

Electrical property; GaN; Glass substrate; InGaN; RF plasma; Thin film

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; LOW TEMPERATURE EFFECTS; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GLASS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS;

PLASMA EXCITATION;

SEMICONDUCTING FILMS;

EID: 0032093718     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00153-5     Document Type: Article

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