Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy

Thin Solid Films

Volumn 516, Issue 10, 2008, Pages 2837-2842

  Shinoda, Hiroyuki ^a   Mutsukura, Nobuki ^a  

^a TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

Aluminum gallium nitride (AlGaN); Epitaxy; Gallium nitride (GaN); Indium gallium nitiride (InGaN); Sputtering; Structural properties; Surface morphology

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTERING; STRUCTURAL PROPERTIES; SURFACE MORPHOLOGY;

FACET STRUCTURE; PYRAMIDS;

GALLIUM NITRIDE;

EID: 39649111351     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.05.035     Document Type: Article

References (17)

1. Nakamura S., Senoh M., and Mukai T. Jpn. J. Appl. Phys. 32 (1993) L8
2. Nakamura S., Senoh M., Nagahara S., Iwasa N., Yamada T., Matsusita T., Sugimoto Y., and Kiyoku H. Appl. Phys. Lett. 69 (1996) 1477
3. Egawa T., Nakamura K., Ishikawa H., Jimbo T., and Umeno M. Jpn. J. Appl. Phys. 38 (1999) 2630
4. Hovel H.J., and Cuomo J.J. Appl. Phys. Lett. 20 (1972) 71
5. Tansley T.L., and Egan R.J. Thin Solid Films 164 (1988) 441
6. Elkashef N., Srinivasa R.S., Major S., Sabharwal S.C., and Muthe K.P. Thin Solid Films 333 (1998) 9
7. Wang C.-W., Soong B.-S., Chen J.-Y., Chen C.-L., and Su Y.-K. J. Appl. Phys. 88 (2000) 6355
8. Miyazaki T., Fujimaki T., Adachi S., and Ohtsuka K. J. Appl. Phys. 89 (2001) 8316
9. Kubota K., Kobayashi Y., and Fujimoto K. J. Appl. Phys. 66 (1989) 2984
10. Meng W.J., and Perry T.A. J. Appl. Phys. 76 (1994) 7824
11. Guo Q.X., Okada A., Kidera H., Tanaka T., Nishio M., and Ogawa H. J. Cryst. Growth 237-239 (2002) 1079
12. Daigo Y., and Mutsukura N. Thin Solid Films 483 (2005) 38
13. Park M., Maria J.-P., Cuomo J.J., Chang Y.C., Muth J.F., Kolbas R.M., Nemanich R.J., Carlson E., and Bumgarner J. Appl. Phys. Lett. 81 (2002) 1797
14. Nagata T., Yoo Y.-Z., Ahmet P., and Chikyow T. Jpn. J. Appl. Phys. 44 (2005) 7896
15. Romano L.T., and Myers T.H. Appl. Phys. Lett. 71 (1997) 3486
16. Daudin B., Rouviere J.L., and Arley M. Appl. Phys. Lett. 69 (1996) 2480
17. Jegarathan K., Shen X.-O., Ide I., Shimizu M., and Okumura H. Jpn. J. Appl. Phys. 41 (2002) 4454