Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 463-465

  Kangawa, Yoshihiro ^a   Kakimoto, Koichi ^a   Ito, Tomonori ^b   Koukitu, Akinori ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Segregation; A3. Metalorganic vapor phase epitaxy; B1. Nitride

Indexed keywords

ATOMIC PHYSICS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MONTE CARLO METHODS; NITRIDES; SEGREGATION (METALLOGRAPHY); THIN FILMS; VAPORS;

A1. SEGREGATION; A3. METALORGANIC VAPOR PHASE EPITAXY; ACTIVE LAYERS; ATOMIC ARRANGEMENTS; ATOMIC CHAINS; B1. NITRIDE; GROWTH CONDITIONS; INGAN LEDS; MONTE CARLO SIMULATIONS; MOVPE; NON-RADIATIVE RECOMBINATIONS; RADIATIVE RECOMBINATIONS; THREADING DISLOCATIONS;

ATOMS;

EID: 59949100785     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.014     Document Type: Article

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