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Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 341-344

Study of carrier recombination at structural defects in InGaN films

(2) Cremades, A a Piqueras, J a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

Carrier recombination; Cathodoluminescence; Dislocations; EBIC; InGaN; Pinholes

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; ELECTRIC CURRENTS; ELECTRON BEAMS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

CARRIER RECOMBINATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037197441 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01056-X Document Type: Conference Paper

Times cited : (10)

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