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Applied Surface Science

Volumn 258, Issue 5, 2011, Pages 1744-1749

Impedometric anion sensing behaviour of In x Ga 1 - X N films grown by modified activated reactive evaporation

(3) Meher, S R a Biju, Kuyyadi P b Jain, Mahaveer K a

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

b Government College Kodenchery (India)

Author keywords

Anion sensing; Impedance spectroscopy; InGaN; Semiconductors; Thin films

Indexed keywords

BINARY ALLOYS; CARRIER CONCENTRATION; CHLORINE COMPOUNDS; EVAPORATION; III-V SEMICONDUCTORS; NEGATIVE IONS; POTASH; POTASSIUM NITRATE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS;

ANION SENSING; ANION-SENSING PROPERTIES; ELECTROCHEMICAL IMPEDANCE; FASTER RESPONSE AND RECOVERY TIME; IMPEDANCE SPECTROSCOPY; INGAN; MODIFIED ACTIVATED REACTIVE EVAPORATION; POSITIVELY CHARGED SURFACES;

GALLIUM ALLOYS;

EID: 81555213540 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.10.032 Document Type: Article

Times cited : (3)

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