Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 12-18

  Komaki, Hironori ^a,b   Katayama, Ryuji ^c   Onabe, Kentaro ^c   Ozeki, Masashi ^b   Ikari, Tetsuo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. PL; A1. Absorption edge; A1. Content control; A1. Phase separation; A1. RF MBE; A1. XRD; B1. InGaN

Indexed keywords

CONDENSATION; DISSOCIATION; FLOW PATTERNS; GROWTH (MATERIALS); INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

ABSORPTION EDGE; CONTENT CONTROL;

NITROGEN;

EID: 34249909492     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.044     Document Type: Article

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