Growth and characterization of InxGa1-xN alloys by metalorganic chemical vapor deposition for solar cell applications

Journal of Photonics for Energy

Volumn 2, Issue 1, 2012, Pages

  Huang, Yong ^a,b   Melton, Andrew ^b   Jampana, Balakrishnam ^c   Jamil, Muhammad ^b   Ryou, Jae Hyun ^a,b   Dupuis, Russell D ^a,b,d   Ferguson, Ian T ^b,e  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d Georgia Institute of Technology   (United States)

^e University of North Carolina at Charlotte   (United States)

Author keywords

InGaN; Material quality; Metalorganic Chemical vapor deposition; Phase separation; Solar cells

Indexed keywords

ADATOM MOBILITIES; GROWTH CONDITIONS; HETEROEPITAXIAL LAYERS; INGAN; MACROSCOPIC PHASE SEPARATION; MATERIAL QUALITY; PRECURSOR FLOW RATES; SOLAR-CELL APPLICATIONS;

EPITAXIAL GROWTH; GALLIUM; GROWTH TEMPERATURE; INDIUM; PHASE SEPARATION; SOLAR CELLS; VAPORS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 84896693454     PISSN: None     EISSN: 19477988     Source Type: Journal    
DOI: 10.1117/1.JPE.2.028501     Document Type: Article

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