Removal of near-interface traps at SiO2/4H-SiC (0001) interfaces by phosphorus incorporation

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Okamoto, Dai ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CHANNEL MOBILITY; CURRENT MEASUREMENTS; DENSITY OF ELECTRONS; DRY OXIDATION; INTERFACE STATE DENSITY; INTERFACE TRAPS; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NO ANNEALING; PHOSPHORUS INCORPORATION;

ANNEALING; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PHOSPHORUS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952969090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3432404     Document Type: Article

References (13)

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