Parameters required to simulate electric characteristics of SiC devices for n-type 4H-SiC

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5601-5606

  Kagamihara, Sou ^a   Matsuura, Hideharu ^a   Hatakeyama, Tetsuo ^b   Watanabe, Takatoshi ^b   Kushibe, Mitsuhiro ^b   Shinohe, Takashi ^b   Arai, Kazuo ^c  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; HALL EFFECT; MOSFET DEVICES; NITROGEN; PARAMETER ESTIMATION; SILICON CARBIDE;

DEVICE SIMULATION; DRIFT LAYERS; ELECTRON CONCENTRATION; FREE CARRIER CONCENTRATION SPECTROSCOPY (FCCCCS);

HYDROGEN;

EID: 10044245131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1798399     Document Type: Article

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