Passivation challenges with Ge and III/V devices

ECS Transactions

Volumn 45, Issue 4, 2012, Pages 97-110

  Sioncke, S ^a   Lin, D ^a   Nyns, L ^a   Delabie, A ^a   Thean, A ^a   Horiguchi, N ^a   Struyf, H ^a   De Gendt, S ^a,b   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; GERMANIUM; GERMANIUM OXIDES; GRAPHENE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTERFACE STATES; SEMICONDUCTING INDIUM PHOSPHIDE;

FREE INTERFACE; HIGH MOBILITY CHANNELS; LOW DEFECT DENSITIES; PASSIVATION LAYER; TECHNOLOGY NODES; TRAP CHARGE;

PASSIVATION;

EID: 84869017002     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3700458     Document Type: Conference Paper

References (33)

1. J. Mitard et al., IEDM Tech. Dig., 1-4, (2008).
2. C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi, Appl. Phys. Exp., 2, 071404 (2009).
3. H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett., 93, 032104 (2008).
4. F. Bellenger, M. Houssa, A. Delabie, V. Afanasiev, T. Conard, M. Caymax, M. Meuris, K. De Meyer, and M. M. Heyns, J. of Electrochem. Soc., 155(2), G33-G38 (2008).
5. T. Sugawara, Y. Oshima, R. Sreenivasan, and P. McIntyre, Appl. Phys. Lett., 90, 112912 (2007).
6. K. Saraswat, D. Kim, T. Krishnamohan, D. Kuzum, A. K. Okyay, A. Pethe, and H.-Y. Yu, ECS Trans., 16 (10), 3-12, (2008).
7. S. Sioncke, H.C. Lin, G. Brammertz, A. Delabie, T. Conard, A. Franquet, M. Meuris, H. Struyf, S. De Gendt, M. Heyns, C. Fleischmann, K. Temst, A. Vantomme, M. Müller, M. Kolbe, B. Beckhoff, M. Caymax, J. of Electrochem. Soc., 158 (7), H687 (2011).
8. S. Sioncke, H.C. Lin, L. Nyns, G. Brammertz, A. Delabie, T. Conard, A. Franquet, J. Rip, H. Struyf, S. De Gendt, M. Müller, B. Beckhoff, M. Caymax, J. of Appl. Phys., 110 (8), 084907, (2011).
9. R. Zhang, T. Iwasaki, N. Takoka, M. Takenaka, S. Takagi, Microelectron. Eng., 88, 1533-1536, (2011).
10. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi, VLSI Techn. Dig., 56-57, (2011).
11. R. Zhang, N. Taoka, P.-C. Huang, M. Takenaka, and S. Takagi, IEDM Tech. Dig., 642-644, (2011).
12. G. Brammertz, H.C. Lin, K. Martens, A. Alian, C. Merckling, J. Penaud, D. Kohen, W.-E. Wang, S. Sioncke, A. Delabie, M. Meuris, M. Caymax, M. Heyns, ECS Trans., 19 (5), 375-386 (2009).
13. M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, M.M. Heyns, Microelectron. Eng.,86, 1747-1750 (2009).
14. G. Brammertz, H.C. Lin, M. Caymax, M. Meuris, M. Heyns and M. Paslack, Appl. Phys. Lett., 95 (20), 202109-1-202109-3 (2009).
15. G. Brammertz, A. Ali, H.-C. Lin, M. Mueris, M. Caymax, W.-E. Wang, IEEE Trans. Electron Devices, 58 (11), 3890-3897, (2011).
16. M. M. Frank, H. Shang, S. Rivillon, F. Amy, C.-L. Hsueh, V. K. Paruchuri, R. T. Mo, M. Copel, E. P. Gusev, M. A. Gribelyuk, and Y. J. Chabal, Solid State Phenomena, 103-104, 3 (2005).
17. M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M. M. Heyns, V.V. Afanasiev, and A. Stesmans, Appl. Phys. Lett., 93, 161909 (2008).
18. A. Toriumi, T. Tabata, C.-H. Lee, T. Nishimura, K. Kita, K. Nagashio, Microelectron. Eng., 86, 1571-1576 (2009).
19. A. Toriumi, C.H. Lee, T. Nishimura, S. K. Wang, K. Kita, and K. Nagashio, ECS Trans., 35(3), 443-456 (2011).
20. R. Ota, M. Kunungi, J. of Phys. and Chem. of Solids, 38 (1), 9-13, 1977.
21. A.S. Tverjanovich, Glass Phys. and Chem., 29 (6), 532-536, 2003.
22. C. Fleischmann, S. Sioncke, S. Couet, K. Schouteden, B. Beckhoff, M. Müller, P. Hönicke, M. Kolbe, C. Van Haesendonck, M. Meuris, K. Temst, and A. Vantomme, J. Electrochem. Soc., 158 (5), H589-H594 (2011).
23. A. Delabie, S. Sioncke, J. Rip, S. Van Elshocht, M. Caymax, G. Pourtois, and K. Pierloot, J. Phys. Chem. C, 115, 17523 (2011).
24. A. Delabie, S. Sioncke, J. Rip, S. Van Elshocht, G. Pourtois, M. Mueller, B. Beckhoff, K. Pierloot, J. of Vac. Science and Technol. A, 30 (1), 01A127, (2012).
25. M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G. Wang, R. Loo, E. Simoen, J. Mitard, B. De Jaeger, G. Hellings, K. De Meyer, M. Meuris, and M. Heyns, in 2009 IEEE International Electron Devices Meeting (IEDM), 461 (2009).
26. E. H. Nicolian and J. R. Brews, MOS Phys. and Tech., p. 215-216, Wiley Interscience, New York (2003).
27. W. Wang, C.L. Hinkle, E.M. Vogel, K. Cho, R.M. Wallace, Microelectron. Eng., 88, 1061-1065 (2011).
28. A.P. Kirk, M. Milojevic, J. Kim and R.M. Wallace, Appl. Phys. Lett., 96, 202905 (2010).
29. M. Milojevic, F.S. Aguirre-Tostado, C.L. Hinkle, H.C. Kim, E. M. Vogel, Appl. Phys. Lett., 93, 202902, (2008).
30. M. Tallarida, C. Adelmann, A. Delabie, S. Van Elshocht, M. Caymax, Applied Physics, Letters, 99, 042906 (2011).
31. H.-P. Komsa, A. Pasquerello, Microelectron. Eng., 88, 1436-1439 (2011).
32. J. Robertson, L. Lin, Microelectron. Eng., 88, 1440-1443, (2011).
33. Polygon, Epsilon, ALCVD, and PULSAR are trademarks of ASM international, The Netherlands.