Germanium for high performance MOSFETs and optical interconnects

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 3-12

  Saraswat, Krishna C ^a   Kim, Donghyun ^a   Krishnamohan, Tejas ^a,b   Kuzum, Duygii ^a   Okyay, Ali K ^a,c   Pethe, Abhijit ^a,b   Yu, Hyun Yong ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CMOS INTEGRATED CIRCUITS; GERMANIUM COMPOUNDS; INTEGRATED CIRCUIT INTERCONNECTS; METAL CLEANING; MOSFET DEVICES; PASSIVATION; SILICON; THICK FILMS;

DOPANT ACTIVATION; METAL-INDUCED CRYSTALLIZATION; OFF CURRENT; OPTICAL DETECTORS; OPTOELECTRONIC APPLICATIONS; SILICON CMOS; SURFACE PASSIVATION; THIN AND THICK FILMS;

SI-GE ALLOYS;

EID: 63149105309     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986748     Document Type: Conference Paper

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