High-κ gate dielectrics on silicon and germanium: Impact of surface preparation

Solid State Phenomena

Volumn 103-104, Issue , 2005, Pages 3-6

  Frank, M M ^a   Shang, H ^a   Rivillon, S ^b   Amy, F ^b,c   Hsueh, C L ^b   Paruchuri, V K ^a   Mo, R T ^d   Copel, M ^a   Gusev, E P ^a   Gribelyuk, M A ^d   Chabal, Y J ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c Princeton University   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Atomic layer deposition; Germanium; High dielectrics; Infrared; Passivation; Scaling

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; GERMANIUM; HAFNIUM OXIDES; INFRARED RADIATION; LOGIC GATES; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; SILICON;

ELECTRICAL PASSIVATION; GATE STACKS; HIGH CARRIER MOBILITY; HIGH PERMITTIVITY DIELECTRIC; ORGANIC FUNCTIONALIZATION; SCALING; SEMI-CONDUCTOR SURFACES; SURFACE PREPARATION;

GATE DIELECTRICS;

EID: 29144440686     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.103-104.3     Document Type: Conference Paper

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