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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

(8) Delabie, Annelies a Sioncke, Sonja a Rip, Jens a Van Elshocht, Sven a Pourtois, Geoffrey a,b Mueller, Matthias c Beckhoff, Burkhard c Pierloot, Kristine d

a IMEC (Belgium)

b UNIVERSITY OF ANTWERP (Belgium)

c PHYSIKALISCH TECHNISCHE BUNDESANSTALT (Germany)

d UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BACKBONDS; CLUSTER MODELS; GROWTH INHIBITION; GROWTH PER CYCLE; REACTION CYCLES; REACTION MECHANISM; SEMICONDUCTOR SUBSTRATE; THEORETICAL CALCULATIONS; THEORETICAL RESULT; TOTAL REFLECTION X-RAY FLUORESCENCE;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMS; DENSITY FUNCTIONAL THEORY; GERMANIUM; PH EFFECTS;

COORDINATION REACTIONS;

EID: 84855581113 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3664090 Document Type: Article

Times cited : (59)

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