An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Kirk, A P ^a   Milojevic, M ^a   Kim, J ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BEFORE AND AFTER; CHEMICAL STATE; IN-SITU; IN-SITU DEPOSITION; INAS; LINE SHAPE; MONOCHROMATIC X-RAYS; OXIDATION STATE; SULFUR PASSIVATION; TRIMETHYL ALUMINUMS; XPS;

ALUMINUM; ARSENIC; OXIDATION; PASSIVATION; SEMICONDUCTING INDIUM; SULFUR; THERMOANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77953018514     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3432749     Document Type: Article

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