A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1747-1750

  Scarrozza, M ^a,b   Pourtois, G ^a   Houssa, M ^b   Caymax, M ^a   Stesmans, A ^b   Meuris, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Density functional theory calculations; GaAs; III V semiconductor; Molecular dynamics; Oxidation; Semiconductor oxide interface

Indexed keywords

ATOMIC STRUCTURE; DENSITY FUNCTIONAL THEORY CALCULATIONS; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; GAAS; III-V COMPOUND SEMICONDUCTOR; III-V SEMICONDUCTOR; NATIVE OXIDES; OXIDE INTERFACES; SEMICONDUCTOR-OXIDE INTERFACE; STRUCTURAL CHANGE; THEORETICAL STUDY;

DYNAMICS; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; MOLECULAR DYNAMICS; OXIDATION; REACTION KINETICS; SEMICONDUCTING GALLIUM; SOLID STATE PHYSICS;

DENSITY FUNCTIONAL THEORY;

EID: 67349273754     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.110     Document Type: Article

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