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Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

Analysis of below-threshold efficiency characteristics of InGaN-based blue laser diodes

(6) Ryu, Han Youl a Jun Choi, Won b Jeon, Ki Seong c Kang, Min Goo c Choi, Yunho c Lee, Jeong Soo c

a Inha University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c LG Electronics Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BLUE LASER DIODES; BLUE LIGHT-EMITTING; CARRIER RATE EQUATION; EFFICIENCY CHARACTERISTIC; EFFICIENCY CURVES; EMISSION CHARACTERISTICS; INTERNAL QUANTUM EFFICIENCY; LOW-DISLOCATION DENSITY; PEAK EFFICIENCY; UNIFORM CURRENTS;

AUGERS; EFFICIENCY; LASERS; LIGHT EMITTING DIODES; SPONTANEOUS EMISSION;

GALLIUM COMPOUNDS;

EID: 84868352731 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4759247 Document Type: Article

Times cited : (11)

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