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Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(3) Ryu, Han Youl a Shin, Dong Soo b Shim, Jong In b

a Inha University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; ACTIVE REGIONS; ACTIVE VOLUMES; AUGER RECOMBINATION; CARRIER DISTRIBUTIONS; CARRIER LOCALIZATION; CARRIER RATE EQUATION; DROOP CHARACTERISTICS; EFFECTIVE VOLUME; INGAN QUANTUM WELLS;

EFFICIENCY; GALLIUM COMPOUNDS; LIGHT EMISSION; NITRIDES;

LIGHT EMITTING DIODES;

EID: 84859540207 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3698113 Document Type: Article

Times cited : (111)

References (28)

1
- 77957891166
- 10.1002/pssa.201026149
- J. Piprek, Phys. Status Solidi A 207, 2217 (2010). 10.1002/pssa.201026149
- (2010) Phys. Status Solidi A , vol.207 , pp. 2217
- Piprek, J.¹

2
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Müeller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 81, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

3
- 73349142666
- 10.1109/TED.2009.2035538
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans Electron Devices 57, 79 (2010). 10.1109/TED.2009.2035538
- (2010) IEEE Trans Electron Devices , vol.57 , pp. 79
- Laubsch, A.¹ Sabathil, M.² Baur, J.³ Peter, M.⁴ Hahn, B.⁵

4
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

5
- 33846416197
- Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
- DOI 10.1002/pssa.200673567
- I. V. Rozhansky and D. A. Zakheim, Phys. Status Solidi A 204, 227 (2007). 10.1002/pssa.200673567 (Pubitemid 46144791)
- (2007) Physica Status Solidi (A) Applications and Materials , vol.204 , Issue.1 , pp. 227-230
- Rozhansky, I.V.¹ Zakheim, D.A.²

6
- 35648955103
- Defect related issues in the "current roll-off" in InGaN based light emitting diodes
- DOI 10.1063/1.2801704
- B. Monemar and B. E. Sernelius, Appl. Phys. Lett. 91, 181103 (2007). 10.1063/1.2801704 (Pubitemid 350037159)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 181103
- Monemar, B.¹ Sernelius, B.E.²

7
- 77953574246
- 10.1063/1.3446889
- J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett. 96, 221106 (2010). 10.1063/1.3446889
- (2010) Appl. Phys. Lett. , vol.96 , pp. 221106
- Hader, J.¹ Moloney, J.V.² Koch, S.W.³

8
- 46649103454
- 10.1063/1.2953543
- J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, Appl. Phys. Lett. 92, 261103 (2008). 10.1063/1.2953543
- (2008) Appl. Phys. Lett. , vol.92 , pp. 261103
- Hader, J.¹ Moloney, J.V.² Pasenow, B.³ Koch, S.W.⁴ Sabathil, M.⁵ Linder, N.⁶ Lutgen, S.⁷

9
- 78650340214
- 10.1063/1.3525605
- F. Bertazzi, M. Goano, and E. Bellotti, Appl. Phys. Lett. 97, 231118 (2010). 10.1063/1.3525605
- (2010) Appl. Phys. Lett. , vol.97 , pp. 231118
- Bertazzi, F.¹ Goano, M.² Bellotti, E.³

10
- 79955380032
- 10.1063/1.3570656
- E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, Appl. Phys. Lett. 98, 161107 (2011). 10.1063/1.3570656
- (2011) Appl. Phys. Lett. , vol.98 , pp. 161107
- Kioupakis, E.¹ Rinke, P.² Delaney, K.T.³ Van De Walle, C.G.⁴

11
- 0242415225
- 10.1063/1.1620677
- A. Kaneta, T. Mutoh, Y. Kawakami, S. Fujita, G. Marutsuki, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 83, 3462 (2003). 10.1063/1.1620677
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3462
- Kaneta, A.¹ Mutoh, T.² Kawakami, Y.³ Fujita, S.⁴ Marutsuki, G.⁵ Narukawa, Y.⁶ Mukai, T.⁷

12
- 28344433167
- Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN
- DOI 10.1063/1.2105999, 161104
- K. Okamoto, A. Scherer, and Y. Kawakami, Appl. Phys. Lett. 87, 161104 (2005). 10.1063/1.2105999 (Pubitemid 41717033)
- (2005) Applied Physics Letters , vol.87 , Issue.16 , pp. 1-3
- Okamoto, K.¹ Scherer, A.² Kawakami, Y.³

13
- 33750015835
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
- DOI 10.1038/nmat1726, PII NMAT1726
- S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, Nature Mater. 5, 810 (2006). 10.1038/nmat1726 (Pubitemid 44570864)
- (2006) Nature Materials , vol.5 , Issue.10 , pp. 810-816
- Chichibu, S.F.¹ Uedono, A.² Onuma, T.³ Haskell, B.A.⁴ Chakraborty, A.⁵ Koyama, T.⁶ Fini, P.T.⁷ Keller, S.⁸ Denbaars, S.P.⁹ Speck, J.S.¹⁰ Mishra, U.K.¹¹ Nakamura, S.¹² Yamaguchi, S.¹³ Kamiyama, S.¹⁴ Amano, H.¹⁵ Akasaki, I.¹⁶ Han, J.¹⁷ Sota, T.¹⁸

14
- 71149092032
- 10.1002/pssr.200903007
- G. H. Gu, C. G. Park, and K. B. Nam, Phys. Status Solidi (RRL) 3, 100 (2009). 10.1002/pssr.200903007
- (2009) Phys. Status Solidi (RRL) , vol.3 , pp. 100
- Gu, G.H.¹ Park, C.G.² Nam, K.B.³

15
- 79952837747
- 10.3938/jkps.58.503
- J. I. Shim, H. Kim, D. S. Shin, and H. Y. Ryu, J. Korean Phys. Soc. 58, 503 (2011). 10.3938/jkps.58.503
- (2011) J. Korean Phys. Soc. , vol.58 , pp. 503
- Shim, J.I.¹ Kim, H.² Shin, D.S.³ Ryu, H.Y.⁴

16
- 37149027248
- Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
- DOI 10.1063/1.2807272
- N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Göez, and M. R. Krames, Appl. Phys. Lett. 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 243506
- Gardner, N.F.¹ Muller, G.O.² Shen, Y.C.³ Chen, G.⁴ Watanabe, S.⁵ Gotz, W.⁶ Krames, M.R.⁷

17
- 72449187514
- 10.1063/1.3266014
- M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys. 106, 114508 (2009). 10.1063/1.3266014
- (2009) J. Appl. Phys. , vol.106 , pp. 114508
- Meneghini, M.¹ Trivellin, N.² Meneghesso, G.³ Zanoni, E.⁴ Zehnder, U.⁵ Hahn, B.⁶

18
- 33846438967
- 10.1063/1.2431717
- E. H. Park, D. N. H. Kang, I. T. Ferguson, S. K. Jeon, J. S. Park, and T. K. Yoo, Appl. Phys. Lett. 90, 031102 (2006). 10.1063/1.2431717
- (2006) Appl. Phys. Lett. , vol.90 , pp. 031102
- Park, E.H.¹ Kang, D.N.H.² Ferguson, I.T.³ Jeon, S.K.⁴ Park, J.S.⁵ Yoo, T.K.⁶

19
- 38949146387
- Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes
- DOI 10.1063/1.2839305
- A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305 (Pubitemid 351230052)
- (2008) Applied Physics Letters , vol.92 , Issue.5 , pp. 053502
- David, A.¹ Grundmann, M.J.² Kaeding, J.F.³ Gardner, N.F.⁴ Mihopoulos, T.G.⁵ Krames, M.R.⁶

20
- 77957660712
- 10.1063/1.3493654
- Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M. H. Kim, and Y. Park, Appl. Phys. Lett. 97, 133507 (2010). 10.1063/1.3493654
- (2010) Appl. Phys. Lett. , vol.97 , pp. 133507
- Dai, Q.¹ Shan, Q.² Wang, J.³ Chhajed, S.⁴ Cho, J.⁵ Schubert, E.F.⁶ Crawford, M.H.⁷ Koleske, D.D.⁸ Kim, M.H.⁹ Park, Y.¹⁰

21
- 77949745836
- 10.1063/1.3330870
- A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010). 10.1063/1.3330870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 103504
- David, A.¹ Grundmann, M.J.²

22
- 56349141665
- 10.1063/1.3009967
- X. A. Cao, Y. Yang, and H. Guo, J. Appl. Phys. 104, 093108 (2008). 10.1063/1.3009967
- (2008) J. Appl. Phys. , vol.104 , pp. 093108
- Cao, X.A.¹ Yang, Y.² Guo, H.³

23
- 77951769389
- 10.1007/s00340-009-3856-6
- J. R. Chen, Y. C. Wu, S. C. Ling, T. S. Ko, T. C. Lu, H. C. Kuo, Y. K. Kuo, and S. C. Wang, Appl. Phys. B 98, 779 (2010). 10.1007/s00340-009-3856-6
- (2010) Appl. Phys. B , vol.98 , pp. 779
- Chen, J.R.¹ Wu, Y.C.² Ling, S.C.³ Ko, T.S.⁴ Lu, T.C.⁵ Kuo, H.C.⁶ Kuo, Y.K.⁷ Wang, S.C.⁸

24
- 77956209055
- 10.1063/1.3462916
- A. David and M. J. Grundmann, Appl. Phys. Lett. 97, 033501 (2010). 10.1063/1.3462916
- (2010) Appl. Phys. Lett. , vol.97 , pp. 033501
- David, A.¹ Grundmann, M.J.²

25
- 67649997001
- 10.1002/pssa.200880926
- M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, Phys. Status Solidi A 206, 1125 (2009). 10.1002/pssa.200880926
- (2009) Phys. Status Solidi A , vol.206 , pp. 1125
- Peter, M.¹ Laubsch, A.² Bergbauer, W.³ Meyer, T.⁴ Sabathil, M.⁵ Baur, J.⁶ Hahn, B.⁷

26
- 77955195692
- 10.1109/LPT.2009.2037827
- C. H. Wang, J. R. Chen, C. H. Chiu, H. C. Kuo, Y. L. Li, T. C. Lu, and S. C. Wang, IEEE Photon. Technol. Lett. 22, 236 (2010). 10.1109/LPT.2009.2037827
- (2010) IEEE Photon. Technol. Lett. , vol.22 , pp. 236
- Wang, C.H.¹ Chen, J.R.² Chiu, C.H.³ Kuo, H.C.⁴ Li, Y.L.⁵ Lu, T.C.⁶ Wang, S.C.⁷

27
- 80855141642
- 10.1063/1.3658031
- J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett. 99, 181127 (2011). 10.1063/1.3658031
- (2011) Appl. Phys. Lett. , vol.99 , pp. 181127
- Hader, J.¹ Moloney, J.V.² Koch, S.W.³

28
- 69549108530
- 10.1063/1.3216578
- H. Y. Ryu, H. S. Kim, and J. I. Shim, Appl. Phys. Lett. 95, 081114 (2009). 10.1063/1.3216578
- (2009) Appl. Phys. Lett. , vol.95 , pp. 081114
- Ryu, H.Y.¹ Kim, H.S.² Shim, J.I.³

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