Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates

IEEE Photonics Technology Letters

Volumn 23, Issue 12, 2011, Pages 798-800

  Chao, Chu Li ^a,b   Xuan, Rong ^a,b   Yen, Hsi Hsuan ^a   Chiu, Ching Hsueh ^a   Fang, Yen Hsiang ^b   Li, Zhen Yu ^a   Chen, Bo Chun ^a,b   Lin, Chien Chung ^a   Chiu, Ching Hua ^a   Guo, Yih Der ^b   Kuo, Hao Chung ^a   Chen, Jenn Fang ^a   Cheng, Shun Jen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Droop; freestanding GaN (FS GaN); homoepitaxially; light emitting diodes (LEDs)

Indexed keywords

DROOP; EXTERNAL QUANTUM EFFICIENCY; FORWARD VOLTAGE; FREESTANDING GAN; FREESTANDING GAN SUBSTRATES; GAN NANORODS; HIGH CURRENT DENSITIES; HIGH INJECTION; HOMOEPITAXIALLY; HYDRIDE VAPOR PHASE EPITAXY; IDEALITY FACTORS; INGAN/GAN; LIGHT EMISSION EFFICIENCY; LIGHT-EMITTING DIODES (LEDS); MULTIPLE QUANTUM WELLS; THREADING DISLOCATION DENSITIES;

DIODES; DISLOCATIONS (CRYSTALS); EFFICIENCY; GALLIUM NITRIDE; LIGHT EMISSION; NANORODS; QUANTUM EFFICIENCY; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 79957642738     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2134081     Document Type: Article

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