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Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

On the origin of efficiency roll-off in InGaN-based light-emitting diodes

(3) Cao, X A a Yang, Y a Guo, H a

a West Virginia University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTING GALLIUM; ULTRAVIOLET INSTRUMENTS;

ACTIVE REGIONS; ALINGAN; BULK GAN; CURRENT DEPENDENCES; CURRENT INCREASES; DISLOCATION DENSITIES; DUTY CYCLES; EXTERNAL QUANTUM EFFICIENCIES; HIGH CURRENTS; INGAN LEDS; LIGHT EMITTING DIODE LEDS; LOW CURRENTS; NONRADIATIVE RECOMBINATION CENTERS; NONTHERMAL MECHANISMS; PEAK ENERGIES; PEAK SHIFTS; PULSED CURRENTS;

LIGHT EMITTING DIODES;

EID: 56349141665 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3009967 Document Type: Article

Times cited : (67)

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