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Volumn 99, Issue 9, 2011, Pages

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; C-PLANE SAPPHIRE; EXTERNAL QUANTUM EFFICIENCY; GAN SUBSTRATE; INGAN LED; INGAN/GAN; OPERATION CONDITIONS; RATE-EQUATION MODELS; THREADING DISLOCATION DENSITIES;

EID: 80052531001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605572     Document Type: Article
Times cited : (84)

References (20)
  • 10
    • 27144482123 scopus 로고    scopus 로고
    • Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
    • DOI 10.1103/PhysRevLett.95.127402, 127402
    • A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 95, 127402 (2005). 10.1103/PhysRevLett.95.127402 (Pubitemid 41505655)
    • (2005) Physical Review Letters , vol.95 , Issue.12 , pp. 1-4
    • Hangleiter, A.1    Hitzel, F.2    Netzel, C.3    Fuhrmann, D.4    Rossow, U.5    Ade, G.6    Hinze, P.7
  • 16
    • 49349122938 scopus 로고
    • 10.1016/0038-1098(78)90909-2
    • M. Jaros, Solid State Commun. 25, 1071 (1978). 10.1016/0038-1098(78) 90909-2
    • (1978) Solid State Commun. , vol.25 , pp. 1071
    • Jaros, M.1
  • 17
    • 4243084092 scopus 로고
    • 10.1103/PhysRevB.37.2594
    • A. Hangleiter, Phys. Rev. B. 37, 2594 (1988). 10.1103/PhysRevB.37.2594
    • (1988) Phys. Rev. B. , vol.37 , pp. 2594
    • Hangleiter, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.