The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Hammersley, S ^a   Watson Parris, D ^a   Dawson, P ^a   Godfrey, M J ^a   Badcock, T J ^a   Kappers, M J ^b   McAleese, C ^b   Oliver, R A ^b   Humphreys, C J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; DELOCALIZATIONS; EXCITATION POWER; EXCITATION POWER DENSITY; INGAN/GAN QUANTUM WELL; LOCAL VARIATIONS; LOCALIZED STATE; NON-LOCALIZED; PER UNIT; PHOTOLUMINESCENCE ENERGY; PHOTOLUMINESCENCE INTENSITIES; PHYSICAL MECHANISM; RANDOMLY DISTRIBUTED; S SHAPE; TEMPERATURE DEPENDENCE; THEORETICAL MODELS; UNDERLYING CAUSE;

CARRIER CONCENTRATION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84860525467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3703062     Document Type: Article

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