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Volumn 109, Issue 9, 2011, Pages

Recombination coefficients of GaN-based laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

AUGER SCATTERING; CARRIER LEAKAGE; CARRIER RECOMBINATION; CHARGE CARRIER RECOMBINATION; DYNAMICAL PROPERTIES; GAIN SPECTROSCOPY; GAN LASER DIODES; GAN-BASED LASER DIODES; INGAN QUANTUM WELLS; INJECTION EFFICIENCY; RATE-EQUATION MODELS; RECOMBINATION COEFFICIENT; RECOMBINATION RATE; RELAXATION OSCILLATION; SPECTRAL RANGE; THEORETICAL PREDICTION; THIRD-ORDER;

EID: 79959503370     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3585872     Document Type: Article
Times cited : (88)

References (20)
  • 10
    • 77957891166 scopus 로고    scopus 로고
    • 10.1002/pssa.201026149
    • J. Piprek, Phys. Status Solidi A 207, 2217 (2010). 10.1002/pssa.201026149
    • (2010) Phys. Status Solidi A , vol.207 , pp. 2217
    • Piprek, J.1
  • 11
    • 65349159730 scopus 로고    scopus 로고
    • 10.1117/12.803932
    • U. T. Schwarz, Proc. SPIE 49, 72161U (2009). 10.1117/12.803932
    • (2009) Proc. SPIE , vol.49
    • Schwarz, U.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.