High-power and high-efficiency InGaN-based light emitters

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 79-87

  Laubsch, Ansgar ^a   Sabathil, Matthias ^a   Baur, Johannes ^a   Peter, Matthias ^a   Hahn, Berthold ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Droop; GaN; InGaN; Internal quantum efficiency (IQE); LED degradation; LED package technology; LED chip technology; Light emitting diode (LED); Nitride

Indexed keywords

CHIP TECHNOLOGY; DROOP; INTERNAL QUANTUM EFFICIENCY; LED DEGRADATION; PACKAGE TECHNOLOGIES;

CONTACTS (FLUID MECHANICS); CRYSTAL GROWTH; DEGRADATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PACKAGING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TECHNOLOGY;

QUANTUM EFFICIENCY;

EID: 73349142666     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035538     Document Type: Article

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