Injection current-dependent quantum efficiency of InGaN-based light-emitting diodes on sapphire and GaN substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 2, 2009, Pages 195-199

  Yang, Y ^a   Cao, X A ^a   Yan, C H ^b  

^a West Virginia University   (United States)

^b Lumei Optoelectronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLUE SHIFTS; DELOCALIZATION; DISLOCATION DENSITIES; GAN SUBSTRATES; GREEN LEDS; INJECTION CURRENTS; LIGHT EMITTING DIODE LEDS; MISFIT DEFECTS; MULTIPLE QUANTUM WELLS; NON-RADIATIVE RECOMBINATIONS; NONTHERMAL MECHANISMS; PEAK ENERGIES; PEAK SHIFTS; SPECTRAL BROADENING; UV- ANDS;

CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; ULTRAVIOLET INSTRUMENTS;

QUANTUM EFFICIENCY;

EID: 62549104655     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880414     Document Type: Conference Paper

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