Emission of biased green quantum wells in time and wavelength domain

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Schwarz, Ulrich T ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Auger losses; Built in potential; Droop; Efficiency; InGaN LED; Rate equations

Indexed keywords

APPLIED BIAS; BUILT-IN POTENTIAL; CARRIER DENSITIES; DROOP; ELECTROLUMINESCENCE SPECTROSCOPIES; FORWARD BIAS; GREEN LIGHTS; INGAN LED; INJECTION EFFICIENCIES; LASER DIODES; LOW CARRIER DENSITIES; LOWER LIMITS; OPTICAL GAIN SPECTRUM; QUANTUM WELLS; RADIATIVE RECOMBINATIONS; RATE EQUATIONS; SHOCKLEY READ HALLS; SLOPE EFFICIENCIES; SPECTRAL SHIFTS; TIME-RESOLVED; WAVELENGTH DEPENDENCIES; WAVELENGTH DOMAINS; ZERO BIAS;

AUGERS; CAMERAS; CARRIER CONCENTRATION; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LADDER NETWORKS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; STIMULATED EMISSION;

CARRIER LIFETIME;

EID: 65349159730     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.803932     Document Type: Conference Paper

References (27)

1. J. M. Phillips, M. E. Coltrin, M. H. Crawford, A. J. Fischer, M. R. Krames, R. Mueller-Mach, G. O. Mueller, Y. Ohno, L. E. S. Rohwer, J. A. Simmons, and J. Y. Tsao, Research challenges to ultra-efficient inorganic solid-state lighting, Laser & Photonics Reviews 1, 307 (2007).
2. Ch. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, Photonic crystal LEDs - designing light extraction, Laser & Photonics Reviews (2009), doi:10.1002/lpor.200810053.
3. 2, Appl. Phys. Lett. 91, 243506 (2007).
4. J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, On the importance of radiative and Auger losses in GaN-based quantum wells, Appl. Phys. Lett. 92, 261103 (2008).
5. M.-H. Kim, M. F. Schubert, Q. Dai, K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Origin of efficiency droop in GaN-based light-emitting diodes, Appl. Phys. Lett. 91, 183507 (2007).
6. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes, Appl. Phys. Lett. 91, 231114 (2007).
7. L. Wang, J. Wang, H. Li, G. Xi, Y. Jiang, W. Zhano, Y. Han, and Y. Luo, Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes, Appl. Phys. Epress 1, 021101 (2008).
8. J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GalnN/GalnN multi-quantum-well light-emitting diodes, Appl. Phys. Lett. 94, 011113 (2009).
9. S.-I. Nagahama, T. Yanamoto, M. Sano, and T. Mukai, Wavelength dependence of InGaN laser diode characteristics, Jpn. J. Appl. Phys. 40, 3075 (2001).
10. S.-I. Nagahama, Y. Sugimoto, T. Kozaki and T. Mukai. Recent progress of AlInGaN laser diodes, Proc. SPIE 5738, 57 (2005).
11. U. T. Schwarz, H. Braun, K. Kojima, Y. Kawakami, S. Nagahama, and T. Mukai, Interplay of builtin potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells, Appl. Phys. Lett. 91, 123503 (2007).
12. B. Witzigmann, M. Tomamichel, S. Steiger, R. G. Veprek, K. Kojima, and U. T. Schwarz, Analysis of gain and luminescence in violet and blue GalnN/GaN quantum-wells, IEEE J. Quantum Electronics 44, 144 (2008).
13. J. Hader, J. V. Moloney, and S. W. Koch, Influence of internal fields on gain and spontaneous emission in InGaN quantum wells, Appl. Phys. Lett. 89, 171120 (2006).
14. J. V. Moloney, J. Hader, and S.W. Koch, Quantum design of semiconductor active materials: laser and amplifier applications, Laser & Photonics Reviews 1, 4 (2007).
15. K. Kojima, U. T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes, Optics Express 15, 7730 (2007).
16. K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Kumai, H. Braun, U. T. Schwarz, Gain suppression phenoma observed in InGaN QW laser diodes emitting at 470 nm, Appl. Phys. Lett. 89, 241127 (2006).
17. U. T. Schwarz, H. Braun, K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range, Proc. SPIE 6485, 648506 (2007).
18. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Härle, Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers, Appl. Phys. Lett. 85, 1475 (2004).
19. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, and V. Härle, Gain spectra and currentinduced change of refractice index in (In/Al)GaN diode lasers, phys. stat. sol. (a) 200, 143 (2003).
20. Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, Y. Narukawa, T. Mukai, and S. Fujita, In inhomogeneity and emission characteristics of InGaN, J. Phys.: Condens. Matter 13, 6993 (2001).
21. T. Hino, T. Asano, T. Tojyo, S. Kijima, S. Tomiya, T. Miyajima, S. Uchida, and M. Ikeda, Estimation of Device Properties in AlGalnN-Based Laser Diodes by Time-Resolved Photoluminescence, phys. stat. sol. (a) 188, 101 (2001).
22. Nichia Inc., product guide for aquamarine laser diode NDHA210APAE1.
23. A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. T. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, and B. Hahn, Measurement of the internal quantum efficiency of InGaN quantum wells, Proc. SPIE 6486, 64860J (2007).
24. M. Sabathil, A. Laubsch, and N. Linder, Self-consistent modeling of resonant PL in InGaN SQW LED structure, Proc. SPIE 6486, 64860V (2007).
25. N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Lell, and V. Härle, Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates, J. Appl. Phys. 96, 3666 (2004).
26. M. Schubert, M.-H. Kim, J. K. Kim, and E. F. Schubert, Uncovering the LED's darkest secrets, Compound semiconductors Vol. 13, No. 11, p. 19 (2008).
27. M. Peter, Osram explores the route to high-performance greens, Compound semiconductors Vo. 13, No. 6, p. 16 (2008).