Impact of active layer design on InGaN radiative recombination coefficient and LED performance

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Li, X ^a   Okur, S ^a   Zhang, F ^a   Avrutin, V ^a   Ozgur U ^a   Morko, H ^a   Hong, S M ^b   Yen, S H ^b   Hsu, T S ^b   Matulionis, A ^c  

^a Virginia Commonwealth University   (United States)

^b EPISTAR CORPORATION   (Taiwan)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ACTIVE REGIONS; CURRENT INJECTIONS; DENSITY OF STATE; DOUBLE HETEROSTRUCTURES; ELECTRON HOLE; EXPERIMENTAL OBSERVATION; EXTERNAL QUANTUM EFFICIENCY; HIGH INJECTION; INJECTION LEVELS; INTERNAL FIELD; INTERNAL QUANTUM EFFICIENCY; MATERIAL QUALITY; NONRADIATIVE PROCESS; POLARIZATION FIELD; RADIATIVE RECOMBINATION; RADIATIVE RECOMBINATION RATE; RATE OF INCREASE; SPATIAL OVERLAP; TIME-RESOLVED PHOTOLUMINESCENCE;

COMPUTER SIMULATION; DEGRADATION; DIAGNOSIS; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM; GALLIUM COMPOUNDS; QUANTUM EFFICIENCY; SEPARATION;

LIGHT EMITTING DIODES;

EID: 84859526103     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699199     Document Type: Article

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