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Volumn 48, Issue 12, 2009, Pages
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High-quality SiO2 film formation below 400 °C by plasma enhanced chemical vapor deposition using tetraethoxysilane source gas
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEAL TREATMENTS;
DIELECTRIC LEAKAGE;
ELECTRICAL PROPERTY;
ELECTRON DENSITIES;
FILM FORMATIONS;
HIGH QUALITY;
HIGH TEMPERATURE;
LOW TEMPERATURES;
NEGATIVE BIAS;
OXIDIZATION;
PLASMA DAMAGE;
SOURCE GAS;
TETRAETHOXYSILANES;
THERMAL OXIDES;
CHEMICAL VAPOR DEPOSITION;
COMMUNICATION CHANNELS (INFORMATION THEORY);
DIELECTRIC MATERIALS;
ELECTRIC PROPERTIES;
OXIDE FILMS;
PLASMAS;
SILICON COMPOUNDS;
SURFACE CHEMISTRY;
THERMAL DESORPTION;
THERMAL DESORPTION SPECTROSCOPY;
PLASMA DEPOSITION;
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EID: 75149123864
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.126001 Document Type: Article |
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Times cited : (10)
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References (17)
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