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Volumn 90, Issue 17, 2007, Pages

AlNAlGaNGaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. Silicon substrate for high breakdown characteristics

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; HETEROJUNCTIONS; LEAKAGE CURRENTS; MISFET DEVICES; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 34248545505     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730751     Document Type: Article
Times cited : (51)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.