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Volumn 90, Issue 17, 2007, Pages
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AlNAlGaNGaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. Silicon substrate for high breakdown characteristics
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN;
HETEROJUNCTIONS;
LEAKAGE CURRENTS;
MISFET DEVICES;
SEMICONDUCTING SILICON;
SURFACE ROUGHNESS;
THRESHOLD VOLTAGE;
TRANSCONDUCTANCE;
DRAIN CURRENT DENSITY;
EXTRINSIC TRANSCONDUCTANCE;
GATE LEAKAGE CURRENT;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 34248545505
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2730751 Document Type: Article |
Times cited : (51)
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References (11)
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