Demonstration of low-leakage-current low-on-resistance 600-V 5.5-A GaN/AlGaN HEMT

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1027-1029

  Xin, Xiaobin ^a   Shi, Junxia ^b   Liu, Linlin ^a   Edwards, John ^a   Swaminathan, Kierthi ^a   Pabisz, Marek ^a   Murphy, Michael ^a   Eastman, Lester F ^b   Pophristic, Milan ^a  

^a Velox Semiconductor Corporation   (United States)

^b Cornell University   (United States)

Author keywords

AlGaN; GaN; HEMT; Hfo2; Power switch

Indexed keywords

ALGANGAN; ELECTRIC STRENGTH; HIGH-CURRENT; HIGH-VOLTAGES; LEAKAGE CURRENT DENSITYS; ON-RESISTANCE; PASSIVATION LAYER; POWER SWITCHES; SMALL DEVICES;

DIELECTRIC MATERIALS; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SEMICONDUCTING GALLIUM; SILICON;

GATE DIELECTRICS;

EID: 72049126096     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029130     Document Type: Article

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