Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Nogales, E ^a,d   Martin, R W ^a   O'Donnell, K P ^a   Lorenz, K ^b   Alves, E ^b   Ruffenach, S ^c   Briot, O ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIV MONTPELLIER   (France)

^d UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; CATHODOLUMINESCENCE; DISPERSION (WAVES); DISSOCIATION; EUROPIUM; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; X RAY ANALYSIS;

ANNEALING TEMPERATURES; ELECTRON PROBE MICROANALYSIS; GAN DISSOCIATES; NANOMETRIC ALN CAPS;

NANOSTRUCTURED MATERIALS;

EID: 31144471624     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162797     Document Type: Article

References (16)

1. A. J. Steckl, J. C. Heikenfeld, D.-S. Lee, M. J. Garter, C. C. Baker, Y. Wang, and R. Jones, IEEE J. Sel. Top. Quantum Electron. 8, 749 (2002).
2. P. N. Favennec, H. L. Haridon, M. Salvi, D. Muotonnet, and Y. Le Guillo, Electron. Lett. 25, 718 (1989).
3. J. C. Zolper, D. J. Riegler, A. G. Baca, S. J. Pearton, J. W. Lee, and R. A. Stall, Appl. Phys. Lett. 69, 538 (1996).
4. J. C. Zolper, J. Han, R. M. Biefeld, S. B. Van Deusen, W. R. Wampler, D. J. Reiger, S. J. Pearton, J. S. Williams, H. H. Tan, R. F. Karlicek, Jr., and R. A. Stall, J. Electron. Mater. 27, 179 (1998).
5. K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R. W. Martin, K. P. O'Donnell, S. Ruffenach, and O. Briot, Appl. Phys. Lett. 85, 2712 (2004).
6. K. Wang, R. W. Martin, K. P. O'Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach, and O. Briot, Appl. Phys. Lett. 87, 112107 (2005).
7. J. A. Fellows, Y. K. Yeo, R. L. Hengehold, and D. K. Johnstone, Appl. Phys. Lett. 80, 1930 (2002).
8. J. A. Fellows, Y. K. Yeo, M.-Y. Ryu, and R. L. Hengehold, Solid State Commun. 133, 213 (2005).
9. X. A. Cao, C. R. Abernathy, R. K. Singh, S. J. Pearton, M. Fu, V. Sarvepalli, J. A. Sekhar, J. C. Zolper, D. J. Rieger, J. Han, T. J. Drummond, R. J. Shul, and R. G. Wilson, Appl. Phys. Lett. 73, 229 (1998).
10. A. Bourret, Ch. Adelmann, B. Daudin, J.-L. Rouvìre, G. Feuillet, and G. Mula, Phys. Rev. B 63, 245307 (2001).
11. E. Bellet-Amalric, C. Adelmann, E. Sarigiannidou, J. L. Rouvìre, G. Feuillet, E. Monroy, and B. Daudin, J. Appl. Phys. 95, 1127 (2004).
12. M. Gherasimova, G. Cui, Z. Ren, J. Su, X.-L. Wang, J. Han, K. Higashimine, and N. Otsuka, J. Appl. Phys. 95, 2921 (2004).
13. C. McCaleese, M. J. Kappers, F. D. G. Rayment, P. Cherns, and C. J. Humpheys, J. Cryst. Growth 272, 475 (2004).
14. R. W. Martin, S. Dalmasso, K. P. O'Donnell, Y. Nakanishi, A. Yoshida, and The RENiBEl Network, Mater. Res. Soc. Symp. Proc. 743, L6.15 (2003).
15. R. W. Martin, P. R. Edwards, K. P. O'Donnell, E. G. Mackay, and I. M. Watson, Phys. Status Solidi A 192, 117 (2002).
16. H. W. Choi, M. G. Cheong, M. A. Rana, S. J. Chua, T. Osipowicz, and J. S. Pan, J. Vac. Sci. Technol. B 21, 1080 (2003).