Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1087-1094

  Motayed, Abhishek ^a   Bathe, Ravi ^b   Wood, Mark C ^c   Diouf, Ousmane S ^a   Vispute, R D ^b   Noor Mohammad, S ^a  

^a Howard University   (United States)

^b University of Maryland   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; MICROSTRUCTURE; SEMICONDUCTING FILMS; THERMODYNAMIC STABILITY; TITANIUM; X RAY DIFFRACTION ANALYSIS;

MULTILAYER OHMIC CONTACTS;

OHMIC CONTACTS;

EID: 0037439579     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528294     Document Type: Article

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