Improved linearity for low-noise applications in 0.25-μm GaN MISHEMTs using ALD Al2O3 as gate dielectric

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 803-805

  Liu, Z H ^a   Ng, G I ^a   Arulkumaran, S ^a   Maung, Y K T ^a   Teo, K L ^a   Foo, S C ^a   Sahmuganathan, V ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Al2O3; atomic layer deposited (ALD); GaN; high electron mobility transistor (HEMT); linearity; noise

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ATOMIC LAYER DEPOSITED; DC TRANSCONDUCTANCE; HIGH-RESISTIVITY SILICON SUBSTRATE; LOW-NOISE APPLICATIONS; MIS-HEMT; NOISE PERFORMANCE; SCHOTTKY-GATE; SMALL SIGNAL; THIRD-ORDER;

ALUMINUM; ATOMS; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LINEARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955171553     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2051136     Document Type: Article

References (15)

1. S. E. Shih, W. R. Deal, D. Yamauchi, W. E. Sutton, Y. C. Chen, I. Smorchkova, B. Heying, M. Wojtowicz, and M. Siddiqui, "Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2009, pp. 669-672.
2. C. Sanabria, A. Chakraborty, H. Xu, M. J. Rodwell, U. K. Mishra, and R. A. York, "The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol.27, no.1, pp. 19-21, Jan. 2006.
3. 3 gate insulator grown by ALD," IEEE Electron Device Lett., vol.31, no.2, pp. 96-98, Feb. 2010.
4. I. Khalil, A. Liero, M. Rudolph, R. Lossy, and W. Heinrich, "GaN HEMT potential for low-noise highly linear RF applications," IEEE Microw. Wireless Compon. Lett., vol.18, no.9, pp. 605-607, Sep. 2008.
5. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, and U. K. Mishra, "Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs," IEEE Electron Device Lett., vol.25, no.5, pp. 229-231, May 2004.
6. J. S. Moon, M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, W.-S. Wong, and L. McCray, "Linearity of low microwave noise AlGaN/GaN HEMTs," Electron. Lett., vol.38, no.22, pp. 1358-1359, Oct. 2002.
7. P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, R. Neidhard, L. Kehias, and T. Jenkins, "High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs," in Proc. IEEE Lester Eastman Conf. High Perform. Devices, Aug. 2002, pp. 415-421.
8. A. Tarakji, H. Fatima, X. Hu, J. P. Zhang, G. Simin, M. A. Khan, M. S. Shur, and R. Gaska, "Large-signal linearity in III-N MOSDFETs," IEEE Electron Device Lett., vol.24, no.6, pp. 369-371, Jun. 2003.
9. S. Arulkumaran, Z. H. Liu, G. I. Ng, S. L. Selvaraj, and T. Egawa, "Influence of ammonia in the deposition process of SiN on the performance of SiN/AIGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on 4-in. Si(111)," Appl. Phys. Express, vol.2, no.3, pp. 031 001-031 003, Mar. 2009.
10. 3 high k dielectric," Phys. Stat. Sol.(C), no.7, pp. 2351-2354, Dec. 2003.
11. 3 as gate dielectric," Appl. Phys. Lett., vol.86, no.6, pp. 063501-1-063501-3, Feb. 2005.
12. 3 as gate insulator," Appl. Phys. Lett., vol.95, no.22, pp. 223501-1-223501-3, Nov. 2009.
13. J. Mateos, T. Gonzalez, D. Pardo, S. Bollaert, T. Parenty, and A. Cappy, "Design optimization of AlInAs-GaInAs HEMTs for low-noise applications," IEEE Trans. Electron Devices, vol.51, no.8, pp. 1228-1233, Aug. 2004.
14. M. S. Shur and R. F. Davis, GaN-Based Materials and Devices: Growth, Fabrication, Characterization and Performance. River Edge, NJ: World Scientific, 2004.
15. S. A. Maas, Noise in Linear and Nonlinear Circuits. Boston, MA: Artech House, 2005.