Origin of flat-band voltage sharp roll-off in metal gate/high-k /ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

  Zheng, X H ^a   Huang, A P ^a   Xiao, Z S ^a   Yang, Z C ^a   Wang, M ^a   Zhang, X W ^b   Wang, W W ^c   Chu, Paul K ^d  

^a BEIHANG UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c INSTITUTE OF MICROELECTRONICS   (China)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; FLAT-BAND VOLTAGE; METAL OXIDE SEMICONDUCTOR; OXYGEN DIFFUSION; ULTRA-THIN;

DIELECTRIC DEVICES; METALS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTING SILICON;

EID: 77957680826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491292     Document Type: Article

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