Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1280-1284

  Kakushima, K ^a   Okamoto, K ^a   Adachi, M ^a   Tachi, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electronegativity; Flat band voltage; HfO2; High k; La2O3; Metal gate

Indexed keywords

ELECTRONEGATIVITY; FLAT BAND VOLTAGE; FLATBAND VOLTAGE SHIFTING; HFO2; HIGH-K; LA2O3; METAL GATE;

HAFNIUM COMPOUNDS;

EID: 50349096234     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.015     Document Type: Article

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