Fermi-level pinning at metal/high-k interface influenced by electron state density of metal gate

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1101-1103

  Yang, Z C ^a   Huang, A P ^a,b   Zheng, X H ^a   Xiao, Z S ^a   Liu, X Y ^b,c   Zhang, X W ^b,d   Chu, Paul K ^b   Wang, W W ^e  

^a BEIHANG UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d INSTITUTE OF SEMICONDUCTORS   (China)

^e INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Electron state density; Fermi level pinning (FLP); MIS structures; work function (WF)

Indexed keywords

EFFECTIVE WORK FUNCTION; ELECTRON STATE DENSITY; FERMI LEVEL PINNING; IMAGE CHARGES; INTERFACE CHARGE; METAL GATE; MIS STRUCTURES; VACUUM LEVEL; WORK FUNCTION (WF);

ELECTRONS; VACUUM; WORK FUNCTION;

METALS;

EID: 77957575466     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2062171     Document Type: Article

References (20)

1. W. Mönch, "Metal-semiconductor contacts: Electronic properties," Surf. Sci., vol.299/300, pp. 928-944, Jan. 1994.
2. Y. C. Yeo, T. J. King, and C. Hu, "Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology," J. Appl. Phys., vol.92, no.12, pp. 7266-7271, Dec. 2002.
3. H. C. Wen, P. Majhi, K. Choi, C. S. Park, H. N. Alshareef, H. Rusty Harris, H. Luan, H. Niimi, H. B. Park, G. Bersuker, P. S. Lysaght, D. L. Kwong, S. C. Song, B. H. Lee, and R. Jammy, "Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes," Microelectron. Eng., vol.85, no.1, pp. 2-8, Jan. 2008.
4. H. B.Michaelson, "The work function of the elements and its periodicity," J. Appl. Phys., vol.48, no.11, pp. 4729-4733, Nov. 1977.
5. K. Laegu, B. H. Lee,W. J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, "Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric," IEEE Electron Device Lett., vol.21, no.4, pp. 181-183, Apr. 2000. (Pubitemid 30589427)
6. x/n-Si gate stack," Appl. Phys. Lett., vol.88, no.7, p. 072 907, Feb. 2006.
7. Z. Li, T. Schram, A. Stesmans, A. Franquet, T. Witters, L. Pantisano, N. Yamada, T. Tsunoda, J. Hooker, S. D. Gendt, and K. D. Meyer, "Influence of metal capping layer on the work function of Mo gated metaloxide semiconductor stacks," Appl. Phys. Lett., vol.93, no.8, p. 083 511, Aug. 2008.
8. H. C. Wen, R. Choi, G. A. Brown, T. Böscke, K. Matthews, H. R. Harris, K. Choi, H. N. Alshareef, H. Luan, G. Bersuker, P. Majhi, D. L. Kwong, and B. H. Lee, "Comparison of effective work function extractionmethods using capacitance and current measurement techniques," IEEE Electron Device Lett., vol.27, no.7, pp. 598-601, Jul. 2006.
9. K. Choi, H. N. Alshareef, H. C. Wen, H. Harris, H. Luan, Y. Senzaki, P. Lysaght, P.Majhi, and B. H. Lee, "Effective work function modification of atomic-layer-deposited-TaN film by capping layer," Appl. Phys. Lett., vol.89, no.3, p. 032 113, Jul. 2006.
10. 2 for n-type metal-oxidesemiconductor devices," Appl. Phys. Lett., vol.86, no.9, p. 092 107, Feb. 2005.
11. H. C. Wen, "Systematic evaluation of metal gate electrode effective work function and its influence on device performance in CMOS devices," Ph.D. dissertation, Dept. Elect. Comput. Eng., Univ. Texas, Austin, TX, 2006.
12. H. Y. Fan, "Theory of electrical contact between solids," Phys. Rev., vol. 61, no. 5/6, pp. 365-371, Mar. 1942.
13. Z. Li, M. Houssa, T. Schram, S. D. Gendt, and K. De Meryer, "Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure," Appl. Phys. Lett., vol.95, no.18, p. 183 506, Nov. 2009.
14. 2 interfaces," Appl. Phys. Lett., vol.88, no.22, p. 222 102, May 2006.
15. 2. dielectric stack," Appl. Phys. Lett., vol.92, no.9, p. 092 907, Mar. 2008.
16. G. Gladstone, M. A. Jensen, and J. R. Schrieffer, "Superconductivity in the transition metals: Theory and experiment," in Superconductivity, R. D. Parks, Ed. New York: Marcel Dekker, 1969, pp. 665-816.
17. R. T. Tung, "Chemical bonding and Fermi level pinning at metalsemiconductor interfaces," Phys. Rev. Lett., vol.84, no.26, pp. 6078-6081, Jun. 2000.
18. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, H. H. Tseng, S. G. H. Anderson, B. E. White, and P. J. Tobin, "Fermi-level pinning at the polysilicon/metal-oxide interface-Part II," IEEE Trans. Electron Devices, vol.51, no.6, pp. 978-984, Jun. 2004.
19. 2/Si interfaces," J. Appl. Phys., vol.96, no.5, pp. 2701-2707, Sep. 2004.
20. S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. C. Wen, K. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, "Mechanism of Vfb roll-off with high work function metal gate and low temperature oxygen incorporation to achieve PMOS band edge work function," in IEDM Tech Dig., 2007, pp. 337-340.