Biaxial texture development in aluminum nitride layers during off-axis sputter deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 5, 2012, Pages

  Deng, Ruopeng ^a   Muralt, Paul ^b   Gall, Daniel ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM MOBILITIES; ALN; ALUMINUM NITRIDE LAYER; BIAXIAL TEXTURES; COMPETITIVE GROWTH; CROSS SECTION; CRYSTAL HABITS; DEPOSITION ANGLE; DEPOSITION FLUXES; FIBER TEXTURE; GRAIN ORIENTATION; INTER-GRAIN; LOW ENERGIES; OFF-AXIS; ORIENTATION DEPENDENCE; POLE FIGURE ANALYSIS; POLYCRYSTALLINE ALUMINUM; POPULATION II; PREFERRED ORIENTATIONS; PULSED DC; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; SHEAR MODES; SUBSTRATE SURFACE; WURTZITES;

ALUMINUM NITRIDE; ELECTROMECHANICAL COUPLING; X RAY DIFFRACTION; ZINC SULFIDE;

TEXTURES;

EID: 84865450128     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4732129     Document Type: Article

References (58)

1. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe (Wiley, New York, 2001).
2. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006). 10.1038/nature04760 (Pubitemid 44050193)
3. R. B. Karabalin, M. H. Matheny, X. L. Feng, E. Defay, G. Le Rhun, C. Marcoux, S. Hentz, P. Andreucci, and M. L. Roukes, Appl. Phys. Lett. 95, 103111 (2009). 10.1063/1.3216586
4. A. Artieda and P. Muralt, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 55, 2463 (2008). 10.1109/TUFFC.953
5. S. Tadigadapa and K. Mateti, Meas. Sci. Technol. 20, 092001 (2009). 10.1088/0957-0233/20/9/092001
6. P. Muralt, J. Am. Ceram. Soc. 91, 1385 (2008). 10.1111/j.1551-2916.2008. 02421.x (Pubitemid 351661434)
7. B. Aspar, R. Rodriguez-Clemente, A. Figueras, B. Armas, and C. Combescure, J. Cryst. Growth 129, 56 (1993). 10.1016/0022-0248(93)90433-W
8. B. Daudin and F. Widmann, J. Cryst. Growth 182, 1 (1997). 10.1016/S0022-0248(97)00339-4
9. M. Akiyama, N. Ueno, K. Nagao, and T. Yamada, J. Mater. Sci. 41, 4691 (2006). 10.1007/s10853-006-0051-6 (Pubitemid 44221356)
10. A. Artieda, C. Sandu, and P. Muralt, J. Vac. Sci. Technol. A 28, 390 (2010). 10.1116/1.3359588
11. J. Bjurström, G. Wingqvist, and I. Katardjiev, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53, 2095 (2006). 10.1109/TUFFC.2006.149 (Pubitemid 46104008)
12. C.-C. Cheng, Y.-C. Chen, H.-J. Wang, and W.-R. Chen, Jpn. J. Appl. Phys. 35, 1880 (1996). 10.1143/JJAP.35.1880
13. H. Cheng, Surf. Coat. Tech. 166, 231 (2003). 10.1016/S0257-8972(02)00771- 5 (Pubitemid 36225343)
14. H. E. Cheng, Thin Solid Films 425, 85 (2003). 10.1016/S0040-6090(02) 01137-9
15. H. Cheng, Thin Solid Films 434, 112 (2003). 10.1016/S0040-6090(03)00428-0
16. M. Clement, E. Iborra, J. Sangrador, a. Sanz-Hervás, L. Vergara, and M. Aguilar, J. Appl. Phys. 94, 1495 (2003). 10.1063/1.1587267
17. N. Dellas and J. Harper, Thin Solid Films 515, 1647 (2006). 10.1016/j.tsf.2006.05.039 (Pubitemid 44716099)
18. D. Deniz, J. M. E. Harper, J. W. Hoehn, and F. Chen, J. Vac. Sci. Technol. A 25, 1214 (2007). 10.1116/1.2712190 (Pubitemid 47142965)
19. G. F. Iriarte, J. G. Rodríguez, and F. Calle, Mater. Res. Bull. 45, 1039 (2010). 10.1016/j.materresbull.2010.05.035
20. M. Ishihara, Thin Solid Films 316, 152 (1998). 10.1016/S0040-6090(98) 00406-4
21. J.-K. Kim and S.-H. Jeong, J. Kor. Phys. Soc. 38, 19 (2001).
22. F. S. Ohuchi, J. Vac. Sci. Technol. A 5, 1630 (1987). 10.1116/1.574579
23. A. Artieda, M. Barbieri, C. S. Sandu, and P. Muralt, J. Appl. Phys. 105, 6 (2009). 10.1063/1.3068309
24. S.-H. Lee, J.-K. Lee, and K. H. Yoon, J. Vac. Sci. Technol. A 21, 1 (2003). 10.1116/1.1521961
25. H.-E. Cheng, T.-C. Lin, and W.-C. Chen, Thin Solid Films 425, 85-89 (2003). 10.1016/S0040-6090(02)01137-9
26. M. A. Dubois and P. Muralt, J. Appl. Phys. 89, 6389 (2001). 10.1063/1.1359162
27. F. Martin, M. E. Jan, S. Rev-Mermet, B. Belgacem, D. Su, M. Cantoni, and P. Muralt, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53, 1339 (2006). 10.1109/TUFFC.2006.1665082
28. J. Bjurstrom, D. Rosen, I. Katardjiev, V. M. Yanchev, and I. Petrov, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51, 1347 (2004). 10.1109/TUFFC.2004.1350963
29. S. Mahieu, P. Ghekiere, D. Depla, and R. Degryse, Thin Solid Films 515, 1229 (2006). 10.1016/j.tsf.2006.06.027 (Pubitemid 44724910)
30. Y. Sato, K. Matsuo, Y. Takahashi, K. Muranaka, K. Fujino, S. Hahakura, K. Ohmatsu, and H. Takei, IEEE Trans. Appl. Supercond. 11, 3365 (2001). 10.1109/77.919784 (Pubitemid 32512665)
31. Y. Xu, C. H. Lei, B. Ma, H. Evans, H. Efstathiadis, R. Manisha, M. Massey, U. Balachandran, and R. Bhattacharya, Supercond. Sci. Technol. 19, 835 (2006). 10.1088/0953-2048/19/8/026 (Pubitemid 44458398)
32. A. Rodríguez-Navarro, W. Otano-Rivera, J. M. García-Ruiz, R. Messier, and L. J. Pilione, J. Mater. Res. 12, 1689 (1997). 10.1557/JMR.1997.0232
33. C. Zhou, H. Li, and D. Gall, Thin Solid Films 517, 1214 (2008). 10.1016/j.tsf.2008.05.049
34. S. V. Kesapragada, P. Victor, O. Nalamasu, and D. Gall, Nano Lett. 6, 854 (2006). 10.1021/nl060122a
35. C. Mulligan and D. Gall, Surf. Coat. Tech. 200, 1495 (2005). 10.1016/j.surfcoat.2005.08.063 (Pubitemid 41762167)
36. D. J. Poxson, F. W. Mont, M. F. Schubert, J. K. Kim, and E. F. Schubert, Appl. Phys. Lett. 93, 101914 (2008). 10.1063/1.2981690
37. C. M. Zhou and D. Gall, Appl. Phys. Lett. 88, 203117 (2006). 10.1063/1.2204759 (Pubitemid 43781819)
38. K. Robbie, J. Vac. Sci. Technol. B 16, 1115 (1998). 10.1116/1.590019
39. D. X. Ye, Y. P. Zhao, G. R. Yang, Y. G. Zhao, G. C. Wang, and T. M. Lu, Nanotechnology 13, 615 (2002). 10.1088/0957-4484/13/5/314 (Pubitemid 35263790)
40. J. M. Nieuwenhuizen and H. B. Haanstra, Philips Tech. Rev. 27, 87 (1966).
41. R. N. Tait, T. Smy, and M. J. Brett, Thin Solid Films 226, 196 (1993). 10.1016/0040-6090(93)90378-3
42. H. Savaloni and S. B. Najmi, Vacuum 66, 49 (2002). 10.1016/S0042-207X(01) 00423-7 (Pubitemid 34630333)
43. N. Popovic, Z. Bogdanov, B. Goncic, S. Zec, and Z. Rakocevic, Thin Solid Films 343, 75 (1999). 10.1016/S0040-6090(98)01578-8
44. P. J. Dobson and B. J. Hopkins, Thin Solid Films 5, 97 (1970). 10.1016/0040-6090(70)90027-1
45. Y. Nishikawa, Y. Yoshida, and Y. Uesugi, J. Jpn. I. Met. 57, 1192 (1993).
46. Y. Kajikawa, J. Cryst. Growth 289, 387 (2006). 10.1016/j.jcrysgro.2005. 11.089 (Pubitemid 43277829)
47. Y. Kajikawa, S. Noda, and H. Komiyama, J. Vac. Sci. Technol. A 21, 1943 (2003). 10.1116/1.1619414
48. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J. -E. Sundgren, and J. E. Greene, J. Appl. Phys. 84, 6034 (1998). 10.1063/1.368913
49. D. Gall, S. Kodambaka, M. A. Wall, I. Petrov, and J. E. Greene, J. Appl. Phys. 93, 9086 (2003). 10.1063/1.1567797
50. R. Carel, C. V. Thompson, and H. J. Frost, Acta Metall. Mater. 44, 2479 (1996). 10.1016/1359-6454(95)00365-7 (Pubitemid 126356782)
51. F. Ying, R. W. Smith, and D. J. Srolovitz, Appl. Phys. Lett. 69, 3007 (1996). 10.1063/1.116821
52. T. Yanagitani and M. Kiuchi, J. Appl. Phys. 102, 044115 (2007). 10.1063/1.2772589 (Pubitemid 47352458)
53. A. Rodríguez-Navarro, W. Otao-Rivera, J. M. García-Ruiz, R. Messier, and L. J. Pilione, J. Mater. Res. 12, 1850 (1997). 10.1557/JMR.1997.0254
54. V. Dumitru, Thin Solid Films 359, 17 (2000). 10.1016/S0040-6090(99)00726- 9 (Pubitemid 30530970)
55. D. Deniz, T. Karabacak, and J. M. E. Harper, J. Appl. Phys. 103, 083553 (2008). 10.1063/1.2917063 (Pubitemid 351623574)
56. A. Van der Drift, Philips Res. Rep. 22, 267 (1967).
57. S. Mahieu, P. Ghekiere, G. Dewinter, S. Heirwegh, D. Depla, R. Degryse, O. Lebedev, and G. Vantendeloo, J. Cryst. Growth 279, 100 (2005). 10.1016/j.jcrysgro.2005.02.014 (Pubitemid 40574619)
58. S. Shi, S. Chattopadhyay, C. Chen, K. Chen, and L. Chen, Chem. Phys. Lett. 418, 152 (2006). 10.1016/j.cplett.2005.10.107 (Pubitemid 43063366)