Preparation of [0 0 2] oriented AlN thin films by mid frequency reactive sputtering technique

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 85-89

  Cheng, Hsyi En ^a   Lin, Tien Chai ^b   Chen, Wen Chien ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Aluminum nitride; Growth mechanism; Preferred orientations; Reactive sputtering

Indexed keywords

ALUMINUM NITRIDE; DIELECTRIC FILMS; FILM GROWTH; SPUTTER DEPOSITION; SYNTHESIS (CHEMICAL);

REACTIVE SPUTTERING;

THIN FILMS;

EID: 0037415936     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01137-9     Document Type: Article

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