Control of preferential orientation of AlN films prepared by the reactive sputtering method

Thin Solid Films

Volumn 316, Issue 1-2, 1998, Pages 152-157

  Ishihara, M ^a   Li, S J ^a   Yumoto, H ^a   Akashi, K ^a   Ide, Y ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Yamaguchi University   (Japan)

Author keywords

Aluminum nitride; Dimer; Surface acoustic wave devices; Thin films

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ATOMIC PHYSICS; CRYSTAL ORIENTATION; FILM GROWTH; FILM PREPARATION; MAGNETRON SPUTTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

PREFERENTIAL ORIENTATION CONTROL;

SEMICONDUCTING FILMS;

EID: 0032022746     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00406-4     Document Type: Article

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