Growth of highly c-axis oriented aluminum nitride thin films on β-tantalum bottom electrodes

Journal of Materials Science

Volumn 41, Issue 14, 2006, Pages 4691-4694

  Akiyama, M ^a   Ueno, N ^a   Nagao, K ^b   Yamada, T ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UBE INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRODES; MAGNETRON SPUTTERING; TANTALUM; THERMAL EFFECTS; THIN FILMS;

ROOM TEMPERATURE; SPUTTERING CONDITIONS; SUBSTRATE TEMPERATURE; TANTALUM BOTTOM ELECTRODES;

ALUMINUM NITRIDE;

EID: 33747140081     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-006-0051-6     Document Type: Conference Paper

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