The physics of epitaxial graphene on SiC(0001)

Journal of Physics Condensed Matter

Volumn 24, Issue 31, 2012, Pages

  Kageshima, H ^a   Hibino, H ^a   Tanabe, S ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; BI-LAYER; C ATOMS; CARRIER SCATTERING; DOMAIN SIZE; ELECTRONIC TRANSPORT; ENERGY POSITION; EPITAXIAL BILAYERS; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; GRAPHENE SHEETS; GROWTH MECHANISMS; GUIDING PRINCIPLES; HALL RESISTANCE; ISLAND STRUCTURE; SIC SUBSTRATES; STEP EDGE; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; ZERO GATE; ZIGZAG EDGES;

CALCULATIONS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); QUALITY CONTROL; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT;

GRAPHENE;

EID: 84864276197     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/31/314215     Document Type: Article

References (74)

1. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666 (Pubitemid 39440910)
2. Geim A K and Novoselov K S 2007 Nature Mater. 6 183 (Pubitemid 46353764)
3. Geim A K 2009 Science 324 1530
4. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
5. Casady J B and Johnson R W 1996 Solid-State Electron. 39 1409 (Pubitemid 126364649)
6. Friedrichs P, Kimoto T, Ley L and Pensl G 2010 Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications (Weinheim: Wiley)
7. Fissel A 2003 Phys. Rep. 379 149 (Pubitemid 36571124)
8. Hibino H, Kageshima H, Maeda F, Nagase M, Kobayashi Y and Yamaguchi H 2008 Phys. Rev. B 77 075413
9. Nagase M, Hibino H, Kageshima H and Yamaguchi H 2008 J. Phys.: Conf. Ser. 100 052006
10. Hibino H, Kageshima H, Maeda F, Nagase M, Kobayashi Y, Kobayashi Y and Yamaguchi H 2008 J. Surf. Sci. Nanotechnol. 6 107
11. Hibino H, Kageshima H, Guo F-Z, Maeda F, Kotsugi M and Watanabe Y 2008 Appl. Surf. Sci. 254 7596
12. Nagase M, Hibino H, Kageshima H and Yamaguchi H 2008 Nanotechnology 19 495701
13. Hibino H, Kageshima H, Kotsugi M, Maeda F, Guo F-Z and Watanabe Y 2009 Phys. Rev. B 79 125437
14. Hibino H, Mizuno S, Kageshima H, Nagase M and Yamaguchi H 2009 Phys. Rev. B 80 085406
15. Kageshima H, Hibino H, Nagase M and Yamaguchi H 2009 Appl. Phys. Express 2 065502
16. Nagase M, Hibino H, Kagashima H and Yamaguchi H 2009 Nanotechnology 20 445704
17. Tanabe S, Sekine Y, Kageshima H, Nagase M and Hibino H 2010 Appl. Phys. Express 3 075102
18. Kageshima H, Hibino H, Nagase M, Sekine Y and Yamaguchi H 2010 Appl. Phys. Express 3 115103
19. Hibino H, Kageshima H and Nagase M 2010 J. Phys. D: Appl. Phys. 43 374005
20. Nagase M, Hibino H, Kageshima H and Yamaguchi H 2010 Appl. Phys. Express 3 045101
21. Kageshima H 2010 Japan. J. Appl. Phys. 49 100207
22. Kageshima H, Hibino H, Nagase M and Yamaguchi H 2010 Mater. Sci. Forum 645-648 597
23. Tanabe S, Sekine Y, Kageshima H, Nagase M and Hibino H 2011 Japan. J. Appl. Phys. 50 04DN04
24. Kageshima H, Hibino H, Nagase M, Sekine Y and Yamaguchi H 2011 Japan. J. Appl. Phys. 50 070115
25. Kageshima H, Hibino H, Nagase M and Yamaguchi H 2011 Japan. J. Appl. Phys. 50 095601
26. Inoue M, Kangawa Y, Wakabayashi K, Kageshima H and Kakimoto K 2011 Japan. J. Appl. Phys. 50 038003
27. Tanabe S, Sekine Y, Kageshima H, Nagase M and Hibino H 2012 Japan. J. Appl. Phys. 51 02BN02
28. Inoue M, Kangawa Y, Kageshima H, Wakabayashi K and Kakimoto K 2011 Proc. 22nd European Conf. on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2011) (Garmisch-Partenkirchen,) p P1.40
29. Kageshima H, Hibino H, Yamaguchi H and Nagase M 2011 Extended Abstracts of Int. Conf. on Solid State Devices and Materials 2011 (SSDM 2011) (Nagoya,) p KM-6-3
30. Kageshima H, Hibino H, Yamaguchi H and Nagase M 2011 Abstracts of Int. Symp. of Surface Science - Towards Nano-, Bio-, and Green Innovation (ISSS-6) (Tokyo,) p 14aB1-2
31. Lin Y M, Dimitrakopoulos C, Jenkins K A, Farmer D B, Chiu H-Y, Grill A and Avouris Ph 2010 Science 327 662
32. Oostinga J B, Heersche H B, Liu X, Morpurgo A and Vandersypen L M K 2008 Nature Mater. 7 151 (Pubitemid 351161346)
33. Zhang Y, Tang T-T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R and Wang F 2009 Nature 459 820
34. Miyazaki H, Tsukagoshi K, Kanda A, Otani M and Okada S 2010 Nano Lett. 10 3888
35. Ohta T, Bostwick A, Seyller Th, Horn K and Rotenberg E 2006 Science 313 951 (Pubitemid 44267382)
36. Riedl C, Coletti C, Iwasaki T, Zakharov A A and Starke U 2009 Phys. Rev. Lett. 103 246804
37. Lee K, Kim S, Points M S, Beechem T E, Ohta T and Tutuc E 2011 Nano Lett. 11 3624
38. Robinson J A, Hollander M, LaBella M, Trumbull K A, Cavalero R and Snyder D W 2011 Nano Lett. 11 3875
39. Emtsev K V et al 2009 Nature Mater. 8 203
40. Emtsev K V, Speck F, Seyller Th and Ley L 2008 Phys. Rev. B 77 155303
41. Ohta T, Bostwick A, McChesney J L, Seyller Th, Horn K and Rotenberg E 2007 Phys. Rev. Lett. 98 206802 (Pubitemid 47139575)
42. Mattausch A and Pankratov O 2007 Phys. Rev. Lett. 99 076802 (Pubitemid 47267852)
43. Varchon F, Hass J, Li X, Nguyen N, Naud C, Mallet P, Veuillen J-Y, Berger C, Conrad E H and Magaud L 2007 Phys. Rev. Lett. 99 126805 (Pubitemid 47462648)
44. Kim S C, Ihm J S, Choi H J and Son Y W 2008 Phys. Rev. Lett. 100 176802 (Pubitemid 351623401)
45. Kangawa Y, Ito T, Hiraoka Y S, Taguchi A, Shiraishi K and Ohachi T 2002 Surf. Sci. 507-510 285 (Pubitemid 34715933)
46. Tanaka S, Morita K and Hibino H 2010 Phys. Rev. B 81 041406
47. Sun G F, Liu Y, Rhim S H, Jia J F, Xue Q K, Weinert M and Li L 2011 Phys. Rev. B 84 195455
48. Kitou Y, Makino E, Ikeda K, Nagakubo M and Onda S 2006 Mater. Sci. Forum 527-529 107
49. Fujita M, Wakabayashi K, Nakada K and Kusakabe K 1996 J. Phys. Soc. Japan 65 1920
50. Okada S, Igami M, Nakada K and Oshiyama A 2000 Phys. Rev. B 62 9896 (Pubitemid 32332442)
51. Okada S and Oshiyama A 2001 Phys. Rev. Lett. 87 146803 (Pubitemid 32962157)
52. Zhang Z, Chen C, Zeng X-C and Guo W 2010 Phys. Rev. B 81 155428
53. Hicks L D and Dresselhaus M S 1993 Phys. Rev. B 47 12727
54. Hicks L D and Dresselhaus M S 1993 Phys. Rev. B 47 16631
55. Venkatasubramanian R, Siivola E, Colpitts T and OQuinn B 2001 Nature 413 597 (Pubitemid 32964053)
56. Harman T C, Taylor P J, Walsh M P and LaForge B E 2002 Science 297 2229
57. -2011 2011 Press release of National Institute of Advanced Industrial Science and Technology www.aist.go.jp/aist-e/latest-research/2011/20111205/ 20111205.html
58. Zuev Y M, Chang W and Kim P 2009 Phys. Rev. Lett. 102 096807
59. Wei P, Bao W, Pu Y, Lau C N and Shi J 2009 Phys. Rev. Lett. 102 166808
60. Seol J H et al 2010 Science 328 213
61. Löfwander T and Fogelström M 2007 Phys. Rev. B 76 193401
62. Dragoman D and Dragoman M 2007 Appl. Phys. Lett. 91 203116 (Pubitemid 350128949)
63. Yan X-Z, Romiah Y and Ting C S 2009 Phys. Rev. B 80 165423
64. Xing Y, Sun Q-F and Wang J 2009 Phys. Rev. B 80 235411
65. Hwang E H, Rossi E and Das Sarma S 2009 Phys. Rev. B 80 235415
66. Ouyang Y and Guo J 2009 Appl. Phys. Lett. 94 263107
67. Chen J-H, Jang C, Xiao S, Ishigami M and Fuhrer M S 2008 Nature Nanotechnol. 3 206 (Pubitemid 351499398)
68. Nomura K and MacDonald A H 2006 Phys. Rev. Lett. 96 256602 (Pubitemid 43974586)
69. Cutler M and Mott N F 1969 Phys. Rev. 181 1336
70. Nagashio K, Nishimura T, Kita K and Toriumi A 2009 Appl. Phys. Express 2 025003
71. Balandin A A, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F and Lau C N 2008 Nano Lett. 8 902
72. Freitag M, Steiner M, Martin Y, Perebeinos V, Chen Z, Tsang J C and Avouris Ph 2009 Nano Lett. 9 1883
73. Saito K, Nakamura J and Natori A 2007 Phys. Rev. B 76 115409
74. Yamauchi J, Tsukada M, Watanabe S and Sugino O 1996 Phys. Rev. B 54 5586