Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: Evidence for Bernal stacking

Nano Letters

Volumn 11, Issue 9, 2011, Pages 3624-3628

  Lee, Kayoung ^a   Kim, Seyoung ^a   Points, M S ^a   Beechem, T E ^b   Ohta, Taisuke ^b   Tutuc, E ^a  

^a The University of Texas at Austin   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Bernal stacking; bilayer; Graphene; quantum Hall; SiC

Indexed keywords

BERNAL STACKING; BILAYER; CHARGE NEUTRALITY; EPITAXIAL GRAPHENE; FILLING FACTOR; MAGNETO TRANSPORT PROPERTIES; PERPENDICULAR MAGNETIC FIELDS; QUANTUM HALL; QUANTUM HALL STATE; SIC; TEMPERATURE DEPENDENCE; VARIABLE RANGE HOPPING;

ATMOSPHERIC PRESSURE; EPITAXIAL GROWTH; GRAPHENE; MAGNETIC FIELDS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052788510     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201430a     Document Type: Article

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