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Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 1, 2011, Pages

Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface

(4) Kageshima, Hiroyuki a Hibino, Hiroki a Yamaguchi, Hiroshi a Nagase, Masao b

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; GRAPHENE GROWTH; GRAPHENE SHEETS; HIGH QUALITY; LOWER ENERGY BARRIERS; SIC SUBSTRATES; THEORETICAL STUDY;

AGGLOMERATION; BUFFER LAYERS; ENERGY BARRIERS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SUBLIMATION;

GRAPHENE;

EID: 80052974159 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.095601 Document Type: Article

Times cited : (20)

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